Fsi International, Inc.

Other

Raychem Limited

Aspect International, Inc.

David C Gray

Jeffery W Butterbaugh

Robert T Fayfield

Kevin L Siefering

John M Heitzinger

Fred C Hiatt

C Fred Hiatt

Dana C Chase, Jr

A mobility device with sit and stand assist for providing disabled individuals with the ability to rise from a sitting position and move about without the aid of an assistant. The mobility device with sit and stand assist generally includes a motorized and steerable Drive Carriage Assembly, a Trailing Cart Assembly attached to the Drive Carriage Assembly, an Outrigger Assembly attached to the Trailing Cart Assembly, a Lift Arm Assembly attached to the Outrigger Assembly, a Lift Arm Locking Bolt Assembly attached to the Lift Arm Assembly, a Knee Brace Assembly attached to the Trailing Cart Assembly, a Control Assembly attached to the Lift Arm Assembly, and a User Connection Group comprised of various components designed to enable the user to comfortably connect himself/herself to the Device such that the user might be able to utilize and benefit from the Device.

Personal independent mobility and lift device

Flip display

Antenna

Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of this substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.

Apparatus for surface conditioning

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

Cleaning method

Method and apparatus for surface conditioning

An assembly for dissipating heat from an active matrix liquid crystal display module while avoiding developing thermally induced mechanical stresses which can adversely affect the electro-optical properties of the liquid crystal material is disclosed. The module is affixed to a circuit board containing electrical leads for connection to drive electronics, in a way such that the substrate containing the active matrix elements is suspended through a window or through-hole in the circuit board and is sunken or nested into a soft elastomeric gel which is electrically non-conductive but thermally conductive. The gel provides the requisite thermal conductivity to dissipate the heat via a heat sink with which the gel is in thermal contact.

Assembly including an active matrix liquid crystal display module

UV irradiation enhances oxidation of metal and/or formation of sublimable ligand compounds using beta-diketone or beta-ketoimine ligand forming compounds. A UV/halogen gas or UV/ozone treatment can be used to efficiently oxidize the metallic material to a suitable form for reaction with the ligand forming compound and UV irradiation can be used during exposure to the ligand forming compound to enhance the formation of sublimable ligand compounds. Oxidization and ligand compound formation can be run sequentially or simultaneously. The process can be used for bulk metals removal, metal film patterning or trace metals removal.

Process for metals removal using beta-diketone or beta-ketoimine ligand

Apparatus and process for conditioning a substrate, contained in a hermetically sealed chamber fed with a conditioning gas which includes a reactive gas, the apparatus including a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of the substrate such that the gas, after it has chemically reacted with the substrate surface, flows radially outward from where it has reacted, toward the nearest edge of the substrate and out an exhaust outlet.

A UV light-enhanced process for rapidly stripping films of silicon nitride in a dry reaction environment, which may be free of plasma or plasma effluents. This process is carried out in a sealed reactor which allows simultaneous exposure of a substrate wafer to a polyatomic fluorine containing gas which can be photodissociated by UV radiation to produce atomic fluorine and to UV radiation. Silicon nitride stripping rates in excess of 500 .ANG./min are readily obtainable with UV-stimulated fluorine-based processes, while maintaining the bulk wafer temperature below 300.degree. C. Selectivities for silicon nitride-to-silicon oxide etching of greater than 30 can be achieved for the stripping of silicon nitride LOCOS mask layers in the presence of field oxide and pad oxide layers when a chlorine or bromine containing gas which can be photodissociated by UV radiation to produce atomic chlorine or bromine is used in mixture with the fluorine containing gas. Selectivity and etch rate are controlled through UV lamp exposure, substrate temperature, and additions of nitrogen diluent, and photodissociable chlorine or bromine containing gases. The process addresses many of the limitations of plasma-downstream etch tools for dry silicon nitride stripping, including complete elimination of charged particles and sputtered contaminants associated with plasma effluents.

UV-enhanced dry stripping of silicon nitride films

An apparatus for generating large arrays of directed beams containing thermally excited, electrically neutral gas species, including vibrationally excited molecules, free radicals, and atoms, is disclosed. A heated plate in which a designed array of long, narrow channels are formed serves both to activate and collimate the gas species, and separates a high pressure reservoir of reactive gas from an evacuated region which serves as the material processing chamber. Selection of the appropriate reservoir pressure and channel geometry facilitates the thermal excitation of the reactive gas through collisions with hot channel walls, and the formation of directed non-collisional beams which may be readily transported through the evacuated chamber. The heated channel array plate is designed to allow good gas flux uniformity over a large target area by appropriately setting the pitch spacing and aspect ratio of the channels. Impingement of the thermally excited neutral gas species on a target material allows cleaning of surface contaminations and residues, removal of material surface layers without causing ballistic damage, or reactive modification of the surface layers. The directionality or angular divergence of the beams may be tuned to adjust the anisotropy of the surface cleaning and/or etching, allowing transport of thermally excited species into high aspect ratio target surface structures.

Growing community of inventors

Sunnyvale, CA, United States of America

David C Gray