Rf Micro Devices, Inc.

Skyworks Solutions, Inc.

Qorvo Us, Inc.

David C Dening

Jon D Jorgenson

Julio C Costa

Michael R Kay

Daniel Charles Kerr

Victor E Steel

Marcelo Jorge Franco

Robert J Baeten

Alan William Ake

Kathleen Muhonen

Milind Shah

Ulrik Riis Madsen

Tony Ivanov

Paul J Augustine

Steve Dorn

Yang Rao

Baker P Scott

Ruediger Bauder

David E Reed

Thomas Scott Morris

Philippe Gorisse

Thomas Somerville

David Durgin Coons

Jackie Johnson

John Bernard Ings

Chris Botzis

Peters Valdemars Erins

Theodora Hristova Ivanova

Craig Andrews

Leonard Reynolds

Vic Steel

Embodiments of methods of non-destructively testing whether a laminated substrate satisfies structural requirements are disclosed herein. Additionally, laminated substrates that can be non-destructively tested are also disclosed along with methods of manufacturing the same. To non-destructively test whether the laminated substrates satisfies the structural requirement, an electrical characteristic of the laminated substrate may be detected. Since the detected electrical characteristic is related to a structural characteristic being tested, whether the structural characteristic complies with the structural requirement can be determined based on the electrical characteristic.

Laminate variables measured electrically

Apparatus and methods for radio frequency (RF) amplifiers are disclosed herein. In certain implementations, a packaged RF amplifier includes a first bipolar transistor including a base electrically connected to an RF input pin and a collector electrically connected to an RF output pin, and a second bipolar transistor including a base electrically connected to an emitter of the first bipolar transistor and a collector electrically connected to the RF output pin. The packaged RF amplifier further includes a first bias circuit electrically connected between the base of the first bipolar transistor and the RF output pin, a second bias circuit electrically connected between the base of the first bipolar transistor and a power low pin, an inductor implemented at least partly by a bond wire, and a third bias circuit electrically connected in series with the inductor between the base of the second bipolar transistor and the power low pin.

Apparatus and methods for radio frequency amplifiers

The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RF impedance translation circuit.

Adaptive impedance translation circuit

Apparatus and methods for electronic amplification are disclosed herein. In certain implementations, an amplifier is provided for amplifying a RF signal, and the amplifier includes a first transistor and a second transistor electrically connected in a Darlington configuration. The first and second transistors can be, for example, bipolar or field effect transistors and the first transistor can amplify an input signal and provide the amplified input signal to the second transistor. The first and second transistors are electrically connected to a power low node such as a ground node through first and second bias circuits, respectively. In certain implementations, the first transistor includes an inductor disposed in the path from the first transistor to the power low voltage. By including the inductor in the path from the first transistor to the ground node, the third order distortion of the amplifier can be improved.

Apparatus and methods for electronic amplification

For the present invention, multiple MEMS switches that are similar in nature are provided along with switch control circuitry. Of the MEMS switches, one MEMS switch is reserved as a dummy MEMS switch while the one or more remaining MEMS switches are active, and are thus used during normal operation of the electronic circuitry that incorporates the MEMS switches. The switch control circuitry will use the dummy MEMS switch to adaptively determine an actuation signal that is sufficient to effect a near closing or soft closing of the dummy MEMS switch. The switch control circuitry may also determine a closing time that defines a time when the dummy MEMS switch closes relative to application of the actuation signal. The actuation signal and closing time may be updated regularly, if not continuously.

Controlled closing of MEMS switches

The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RE impedance translation circuit.

The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.

Integrated lateral high-voltage diode and thyristor

The present invention is a high voltage semiconductor switch that is formed from a chain of series coupled cascode circuits. In one embodiment, the switch may be a single-throw configuration coupled between an output and a direct current (DC) reference. In an alternate embodiment, the switch may be a double-throw configuration such that the output is switched between either a first DC reference or a second DC reference, such as ground. Each cascode circuit may have clamp circuits to prevent over voltage during switching transitions. The series coupled cascode circuits may be formed using discrete components or on a silicon-on-insulator (SOI) wafer, which may have a Silicon Dioxide insulator layer or a Sapphire insulator layer.

High voltage switch using multiple cascode circuits

The present invention relates to providing a uniform operating environment for each of multiple devices by providing a common environment to the devices. The common environment is provided by multiple cavities, which are interconnected by at least one environmental pathway, which may be provided by at least one tunnel. The common environment may help provide uniform operating pressure, which may be a partial or near vacuum, a surrounding gas of uniform contents, such as an inert gas or mixture of inert gases, or both. The devices may include micro-electro-mechanical system (MEMS) devices, such as MEMS switches.

Providing a common environment for multiple MEMS devices

The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.

Integrated lateral high-voltage metal oxide semiconductor field effect transistor

The present invention pertains to a method for manufacturing a ferrite powder for use in making PCB ferrite features. The ferrite powder is easily applied and provides a high ferrite-packing factor. The ferrite powder is a mixture of varying sizes of ferrite particles, an epoxy powder, and curing agent powder.

Ferrite powder optimized for fabrication of ferrite features and related methods

Pilot switch circuitry coupled across first and second terminals of a microelectromechanical system (MEMS) switch is provided to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry establishes a common potential at the first and second terminals prior to, and preferably until, the cantilever contact and terminal contact come into contact with one another when the MEMS switch is closed. The pilot switch circuitry may also establish a common potential at the first and second terminals prior to, and preferably after, the cantilever contact and terminal contact separate from one another when the MEMS switch is opened.

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Stokesdale, NC, United States of America

David C Dening