Cambridge Enterprise Limited

David Bruce Vail

Florin Udrea

Loizos Efthymiou

Martin Arnold

Giorgia Longobardi

John William Findlay

The disclosure relates to a III-nitride power semiconductor based heterojunction device including a low voltage terminal, a high voltage terminal, a control terminal and an active heterojunction transistor formed on a substrate, and further including the following monolithically integrated components: voltage clamp circuit configured to limit a maximum potential that can be applied to the internal gate terminal, an on-state circuit configured to control the internal gate terminal of the active heterojunction transistor during an on-state operation, a turn-off circuit configured to control the internal gate terminal of the active heterojunction transistor during a turn-off operation and during an off-state.

Growing community of inventors

Norfolk, United Kingdom

David Bruce Vail