Flisom Ag

Empa

David Bremaud

Adrian Chirila

Ayodhya Nath Tiwari

Roger Ziltener

Roland Kern

Patrick Bloesch

Shiro Nishiwaki

Björn Keller

A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Seor equivalent ABC absorber layer, such as an ABClayer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio A/B, in the third at a ratio A/Blower than the previous, in the fourth at a ratio A/Bhigher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.

Thin-film photovoltaic device and fabrication method

A method to fabricate monolithically-integrated optoelectronic module apparatuses () comprising at least two series-interconnected optoelectronic components (). The method includes deposition and scribing on an insulating substrate or superstate () of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (), (b) semiconductive layer (), and (c) front-contact components (). Via holes () are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface () of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components () by connecting first front-contact components () to second back-contact electrodes ().

Method and apparatus for thin film module with dotted interconnects and vias

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Uetikon am See, Switzerland

David Bremaud