Ip2ipo Innovations Limited

David Boldrin

Bin Zou

Jan Zemen

Andrei Mihai

Evgeniy Donchev

Andrei Paul Mihai

A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation; a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer; and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.

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London, United Kingdom

David Boldrin