Commissariat a L'energie Atomique Et Aux Energies Alternatives

Nokia Technologies Oy

Thales

Nokia Solutions and Networks Oy

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

David Bitauld

Karim Hassan

Zoran Radivojevic

Ian Davis

Bertrand Szelag

Delphine Neel

Alexandre Shen

Joan Ramirez

Stephane Malhouitre

Brian Stern

Ryan Enright

Stéphane Malhouitre

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

Method for on-silicon integration of a component III-V and on-silicon integrated component III-V

A photonic chip including an optical coupler capable of transferring an optical signal between a first waveguide made of III-V material and a second waveguide made of silicon, this optical coupler including a first extension made of III-V material which extends the core of the first waveguide, a second extension made of silicon which extends the core of the second waveguide, and a SiGe inclusion buried inside of the second extension, this inclusion being made of SiGe whose chemical formula is SiGe, where x is in the range between 0.2 and 0.5, and being optically coupled, on a first side, to the first waveguide and, on a second opposite side, to the second waveguide.

Photonic chip

A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.

Method for manufacturing a mixed layer comprising a silicon waveguide and a silicon nitride waveguide

A system for providing haptic feedback to a user, the system comprising a first piezoelectric transducer array comprising multiple piezoelectric transducers, respective ones of which being configured to generate a second signal at a second frequency, and at least one of which being configured to generate a first signal at a first frequency, and a second piezoelectric transducer array comprising multiple piezoelectric transducers, respective ones of which configured to receive the second signal, and at least one of which configured to generate a third signal to initiate generation of the first signal at the said at least one piezoelectric transducer of the first piezoelectric transducer array, the first frequency suitable for providing a haptic feedback signal for a user.

Haptic feedback

An apparatus comprising: a void; an interferometer detector; and

Apparatus with cantilever light guide

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Massy, France

David Bitauld