Aeroflex Colorado Springs Inc.

Aeroflex Utmc Microelectronic Systems, Inc.

Aeroflex Utmc Microelectronics Systems, Inc.

Utmc Microelectronics Systems Inc.

Aeroflex Utmc Microelectronics, Inc.

Cobham Colorado Springs Inc.

David B Kerwin

Joseph M Benedetto

Harry Gardner

Richard L Woodruff

Scott M Tyson

John Chaffee

Alfio Zanchi

Bradley J Larsen

Rockford C Curby

John T Chaffee

An integrated circuit counter includes a segmented thermometer coding counter architecture that reaches the thermodynamic energy minimum for a forward/reverse counting operation, requiring only one write or one erase operation per count so that energy consumption can be minimized, and circuit endurance maximized.

Minimal-energy up/down counting apparatus and method for extremely low-power applications

A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

Wafer structure for electronic integrated circuit manufacturing

A method of programming a radiation-hardened integrated circuit includes the steps of supplying a prototype device including an SRAM memory circuit or programmable key circuit to a customer, having the customer develop working data patterns in the field in the same manner as a reading and writing to a normal RAM memory, having the customer save the final debugged data pattern, delivering the data pattern to the factory, loading the customer-developed data pattern into memory, programming the customer-developed data pattern into a number of production circuits, irradiating the production circuits at a total dosage of between 300K and 1 Meg RAD to burn the data pattern into memory, and shipping the irradiated and programmed parts to the customer.

Radiation-hardened programmable device

An x-ray detector capable of directly converting x-ray radiation into electrical signals utilizes the radiation induced conductivity of various solid, electrically insulating materials. The detector is configured comprising one or more anodes and cathodes separated by various thicknesses of dielectric material wherein ionization occurs primarily in the electrodes of such detector structure. The radiation induced conductivity of the dielectric material can be modulated by controlling the size, orientation and composition of the electrodes and the dielectric materials as well as the electrical bias between anode and cathode.

Energy sensitive direct conversion radiation detector

A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.

Cross-talk and back side shielding in a front side illuminated photo detector diode array

A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (10to 10ions/cm) of a large atom group III element, such as B, Al, Ga or In at an energy between about 30 and 500 keV. The implant is followed by an implant of a large group V element, such as P, As, Sb, or Bi using similar doses and energies to the group III element. The group V element compensates the group III element. The combination of the two large atoms decreases the diffusivity of small atoms, such as B, in the implanted areas. Furthermore, the combination of the group III and group V elements in roughly equal proportions creates recombination sites and electron traps in the field oxide, resulting in a radiation hardened semiconductor device.

Growing community of inventors

Colorado Springs, CO, United States of America

David B Kerwin