United States of America as Represented by the Secretary of the Air Force

University of Illinois

David B Geohegan

James Gary Eden

Andrew W McCown

A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements, is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.

Photoionization technique for growth of metallic films

The efficiency of pulsed laser systems is enhanced substantially by injecting a minor amount of radiation energy into the system .DELTA.t seconds prior to the emergence of the laser pulse. The degree of power enhancement is a function of both radiation wavelength and time delay.

Growing community of inventors

Urbana, IL, United States of America

David B Geohegan