Sarnoff Corporation

David Arthur Furst

Pradyumna Kumar Swain

Mahalingam Bhaskaran

A method for fabricating CCD imaging structures is disclosed, comprising the steps of providing a silicon substrate; growing a dielectric layer substantially overlying the silicon substrate; depositing a first layer of polysilicon substantially overlaying the dielectric layer; removing at least a portion of the first layer of polysilicon to form a plurality of polysilicon gates and first predetermined inter-gate gaps, each of plurality of the polysilicon gates having a predetermined line width; depositing a second layer of polysilicon of a predetermined thickness substantially overlaying the plurality of polysilicon gates and the first predetermined inter-gate gaps; removing at least a portion of the second layer of polysilicon from between gates of the plurality of polysilicon gates to define a plurality of non-overlapping polysilicon gates and second predetermined inter-gate gaps that expose the dielectric layer, the second predetermined inter-gate gaps being smaller than the first predetermined inter-gate gaps.

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Princeton, NJ, United States of America

David Arthur Furst