Hitachi, Ltd.

Citrix Systems, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Centre National De La Recherche Scientifique

Hgst Netherlands, B.v.

University of Paris Sud XI

Hitachi Europe Limited

David Arfon Williams

Andrew Stuart Troup

Hiroshi Fukuda

Bruce Alvin Gurney

Ernesto Esteban Marinero

Susumu Ogawa

Joerg Wunderlich

Aleksey Andreev

Paul A Cain

Hubert Divoux

Haroon Ahmed

Bryan Gallagher

Katsuyoshi Washio

Ryuta Tsuchiya

Thomas Dudley Boone, Jr

Simon Frost

Yuji Suwa

Claude Chappert

Jeremy Allam

Thibaut Devolder

Tomas Jungwirth

Bruce William Alphenaar

Andrew Irvine

Jörg Wunderlich

Andrew Ferguson

Albert Herble

Jan Zemen

Alex Driskill-Smith

David Hasko

Adrian Michael Marsh

Methods and systems for faster and more efficient smart card logon in a remote computing environment are described herein. Fast smart card logon may be used to reduce latency and improve security. For example, the system may reduce the number of operations (e.g., interactions) between a server used for authentication and the client device. A virtual channel may be established between the server and the client device. The server may receive, from the client device a message including answer to reset (ATR) data of a smart card associated with the client device. The server may substitute the ATR data of the smart card with proxy ATR data of a proxy smart card. The server may determine, based on the proxy ATR data, a cryptographic service provider. The server may transmit, via the cryptographic service provider, via the virtual channel, and to the client device, one or more requests for a cryptographic operation involving the smart card.

Fast smart card login

Methods and systems for faster and more efficient smart card logon in a remote computing environment are described herein. Fast smart card logon may be used to reduce latency and improve security. For example, the system may reduce the number of operations (e.g., interactions) between a server device used for authentication and the client device. A remoting channel may be established between the server device and the client device. The server may receive, from the client device and/or via a personal computer/smart card (PC/SC) protocol, a message comprising an identifier for a smart card. The server device may replace the identifier for the smart card with a substitute identifier. Based on the substitute identifier, the server may determine one or more cryptographic service providers to use for one or more cryptographic operations associated with the smart card. One or more requests for cryptographic operations involving the smart card may be transmitted to the client device, such as via the cryptographic service provider and/or via the remoting channel.

A method of reducing quantum leakage in a qubit device which includes receiving a set of energy level values for a multi-level system which includes first and second working levels |0&#x3e;, |1&#x3e; which provide a qubit, and at least one other level |2&#x3e;, and performing an iteration of determining quantum leakage from at least one of the first and second working levels to the at least one other level for a quantum operation A for at least one pulse wherein each pulse has a respective pulse duration, determining whether the quantum leakage is greater than or equal to a threshold value; and, based on the quantum leakage being greater than or equal to the threshold value, changing the duration of at least one of the at least one pulse.

Quantum leakage suppression method

A silicon-based quantum dot device () is disclosed. The device comprises a substrate () and a layer () of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (: FIG.). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

Silicon-based quantum dot device

A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Magnetoresistive device

A magnetoresistance device comprises a substrate, an elongate semiconductor channel extending in a first direction and at least two conductive leads providing a set of contacts to the channel. The device may comprise an optional semiconductor shunt in contact with the channel. The optional shunt, channel and set of contacts are stacked relative to the substrate in a second direction which is perpendicular to the first direction and the surface of the substrate. The device has a side face running along the channel. The device is responsive to a magnetic field generally perpendicular to the side face.

Stacked magnetoresistance device responsive to a magnetic field generally perpendicular to a side face running along a channel of the device

A device for sensing a magnetic field is described. The device comprises first, second and third leads and a junction between the leads. The junction and leads are arranged in a plane and the junction is configured to exhibit quantum confinement in a direction perpendicular to the plane. The first lead is arranged on one side of the junction and the second and third leads are arranged on an opposite side of the junction. The first lead is configured to limit angle of spread of charge carriers entering the junction so that, when charge carriers flow into the junction from the first lead, the charge carriers form a substantially nondivergent beam.

Magnetic field sensor

A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Fabrication of mesoscopic lorentz magnetoresistive structures

A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.

Magnetoresistance device

A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.

A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.

Lorentz magnetoresistive sensor with integrated signal amplification

Systems and methods for login a user into a computing system are shown and described. The method can include receiving a request for an anonymous user login, creating an identifying tag responsive to the received request, creating a user account incorporating the identifying tag, and providing to the computing system the created user account to log into the computing system.

Systems and methods for user login

A single-electron transistor () has an elongate conductive channel () and a side gate () formed in a 5 nm-thick layer () of GaMnAs. The single-electron transistor () is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Single-charge tunnelling device

A quantum computer comprises a pair of qubits disposed between first and second single-electron electrometers and a control gate. The qubits each comprise a molecule of ammonia caged inside a C molecule disposed on a substrate. The ammonia-bearing C molecule is positioned using a scanning probe microscope.

Quantum computer

Apparatus for producing a flux of charge carriers that may be used in many applications including imaging and lithography comprises an electron source which includes an emitter with a tip radius of about one nanometer and a closely configured extractor, together with a specimen for receiving an electron beam from the source. The apparatus may operate in air under atmospheric conditions and at a much reduced operating voltage.

Growing community of inventors

Cambridge, United Kingdom

David Arfon Williams