University of California

David Aplin

Cesare Soci

Deli Wang

Yu-Hwa Lo

Shadi A Dayeh

Arthur Yasheng Zhang

Lingquan Wang

Xin Yu Bao

Xinyu Bao

Bin Xiang

A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire photodetectors include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Nanowire photodetector and image sensor with internal gain

A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning.

Nanowire array-based light emitting diodes and lasers

Growing community of inventors

Cambridgeshire, United Kingdom

David Aplin