International Business Machines Corporation

David Andrew Lewis

Stanley Joseph Whitehair

Alfred Viehbeck

Jane M Shaw

Jeffrey Donald Gelorme

Jeffrey Curtis Hedrick

Michael Hatzakis

Janusz S Wilczynski

Kam Leung Lee

Raman Gobichettipalayam Viswanathan

Evan Ezra Davidson

Marie Angelopoulos

Lawrence Shungwei Mok

Keith E Fogel

Chandrasekhar Narayan

Jerome J Cuomo

Sally Ann Swanson

Ronnen Andrew Roy

Nancy C LaBianca

Jeffrey W Labadie

Eva Erika Simonyi

Susan J LaMaire

George Frederick Walker

Stephen L Buchwalter

Michael John Brady

Shui-Chih Alan Lien

Alphonso Philip Lanzetta

Alina Deutsch

Joseph J Van Horn

Jer-Ming Yang

Yuk L Tsang

Anthony L Plachy

Bernard Krieger

Clarence S Long

Timothy A Redmond

Gavin T Mills

Jeffrey A Haley

Kathleen S Ginn

Peter E Freiermuth

John P Dunn

Martin Yonnone

William V Corso

The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermittent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

Transparent hard coats for optical elements

A method for fabricating an object to attenuate thermal sensation when handling the object at non-body temperature, and an object fabricated in accord with the method. There is first provided a substrate which has a first surface subject to handling. There is then formed upon the first surface of the substrate a coating. The coating has an optimal density, an optimal thermal conductivity and an optimal thickness such that when the substrate having the coating formed thereupon is equilibrated at a non-body temperature differing from a body temperature and the coating is subsequently contacted with a body at the body temperature during handling, the temperature of the surface of the coating at a contact point of the body with the coating changes precipitously to a temperature near the body temperature and subsequently returns towards the non-body temperature at a rate which permits handling of the coating at the location of the first surface of the substrate by the body with attenuated thermal sensation. The coating simultaneously also minimally attenuates a steady state thermal transfer with respect to the substrate in comparison with an otherwise equivalent substrate absent the coating.

Method for attenuating thermal sensation when handling objects at non-body temperature

The present invention is directed to a method of forming a new material layer or region near an interface region of two dissimilar materials, and an optional third layer, wherein at least one of said dissimilar materials or optional third is capable of being heated by microwave energy. The method of the present invention includes a step of irradiating a structure containing at least two dissimilar materials and an optional third layer under conditions effective to form the new material layer in the structure. An apparatus for conducting the microwave heating as well as the structures formed from the method are also described herein.

Microwave annealing

A three dimensional packaging architecture for ultimate high performance computers and methods for fabricating thereof are described. The packgage allows very dense packaging of multiple integrated circuit chips for minimum communication distances and maximum clock speeds of the computer. The packaging structure is formed from a plurality of subassemblies. Each subassembly is formed from a substrate which has on at least one side thereof at least one integrated circuit device. Between adjacent subassemblies there is disposed a second substrate. There are electrical interconnection means to electrically interconnect contact locations on the subassembly to contact locations on the second substrate. The electrical interconnection means can be solder mounds, wire bonds and the like. The first substrate provides electrical signal intercommunication between the electronic devices and each subassembly. The second substrate provides ground and power distribution to the plurality of subassemblies. Optionally, the outer surfaces of the structure that can be disposed a cube of memory chips.

Three dimensional package and architecture for high performance computer

A means to fabricate a color filter for use in a display, such as a liquid crystal display, in which a physical barrier is created which prevents the flow of a liquid dye after application and ensures that individual cells are filled with only the desired color. Additionally, a means is disclosed which creates a surface with all colors initially present, followed by an exposure means and a development means which enables the desired color to fill the desired cell.

Color filter for TFT displays

The present invention is a method of utilizing microwave energy for annealing of ion implanted wafers. By controlling the time, power density and temperature regime, it is possible to substantially fully anneal the wafer while limiting (and substantially preventing) the diffusion of dopant into the silicon, thereby producing higher performance scaled semiconductor devices. It is also possible, using different conditions, to allow and control the dopant profile (diffusion) into the silicon. Another aspect of the present invention is a method of forming a PN junction in a semiconductor wafer having a profile depth less than about 50 nm and a profile wherein the net doping concentration at said PN junction changes by greater than about one order of magnitude over 6 nm wherein the surface concentration of said dopant is greater than about 1&times;10,/cm,. The method includes providing a semiconductor wafer which can be single crystal or amorphous surface; implanting into said surface a dopant; exposing the surface to an energy source; the energy source being applied to supply energy at a rate such that the surface is substantially fully annealed before the dopant diffuses greater than about 50 nm. Another aspect of the present invention is having a PN junction formed between a first material of a first conductivity type and a second material of a second conductivity type, the junction has a depth of less than about 50 nm, in the first material the net doping concentration at the junction changes by greater than about one order of magnitude over 10 nm, the maximum value of said first conducting material of said wafer has a surface concentration of greater than about 1&times;10,/cm,.

Formation of ultra-shallow semiconductor junction using microwave annealing

A control system for a blind microwave radiation tool a workpiece is described. The controlled system automatically tunes the cavity containing the workpiece. The control system automatically controls the temperature of the workpiece according to a predetermined temperature versus time schedule. Control system automatically determines when the workpiece has reached a particular predetermined physical condition. To achieve these results the control system automatically monitors applied power, reflected power or current temperature and automatically controls the microwave cavity volume and shape and launch structure including antennae location, cavity short location, cavity diameter, coupling loop position, etc. in order to maintain the cavity in resonance and to determine when to exit without operator intervention. Control system can run on a small computer or an embedded controller and is useful for automatically curing polyamic acid to polyimide to a predetermined percent cure, processing preimpregnated glass cloth in a continuous manner which can be used in circuit boards and drying and partial curing of web-like materials automatically without operator intervention.

Radiation control system

A microwave applicator that provides a substantially uniform microwave field distribution over a large area, includes an elongated chamber, preferably operating in the length independent mode. A microwave source generates a microwave field at an output frequency. A waveguide or coaxial cable directs the microwave field from the microwave source into the elongated chamber, either through a side launch, end launch or multi launch. A frequency of the microwave field in the elongated chamber and the output frequency of the microwave source are matched through the use of controlled feedback of critical material and process parameters.

Applicator to provide uniform electric and magnetic fields over a large

A microwave applicator including a cylindrical elongated chamber used to process materials therein; a microwave power source capable of producing microwave power having an electric field; a waveguide connected to the chamber couples microwave power into the microwave chamber. The applicator provides microwave energy having a substantially uniform field distribution over a large area for processing materials such as a web or sheet-like product. The uniformity of the applicator is enhanced by the use of matching devices within the applicator to match the regions of the applicator with no load to regions where the load is present in a continuous manner.

Enhanced uniformity in a length independent microwave applicator

A structure for providing a wide viewing angle for a liquid crystal display or similar comprising the formation of more than one region within a pixel (for each color) which provides more than one pretilt angle is provided by controlling chemistry of a second layer placed in predetermined locations within a single pixel.

Pixels for wide viewing angle liquid crystal display

A microwave processing system comprising a microwave applicator and a microwave source. A microwave source generates a microwave field at an output frequency. A frequency of the microwave field in the elongated chamber and the output frequency of the microwave source are matched through the use of controlled feedback of critical material and process parameters.

Feedback system to automatically couple microwave energy into an

The present invention is a method of utilizing microwave energy for annealing of ion implanted wafers. By controlling the time, power density and temperature regime, it is possible to substantially fully anneal the wafer while limiting (and substantially preventing) the diffusion of dopant into the silicon, thereby producing higher performance scaled semiconductor devices. It is also possible, using different conditions, to allow and control the dopant profile (diffusion) into the silicon. Another aspect of the present invention is a method of forming a PN junction in a semiconductor wafer having a profile depth less than about 50 nm and a profile wherein the net doping concentration at said PN junction changes by greater than about one order of magnitude over 6 nm wherein the surface concentration of said dopant is greater than about 1.times.10.sup.20 /cm.sup.3. The method includes providing a semiconductor wafer which can be single crystal or amorphous surface; implanting into said surface a dopant; exposing the surface to an energy source; the energy source being applied to supply energy at a rate such that the surface is substantially fully annealed before the dopant diffuses greater than about 50 nm. Another aspect of the present invention is having a PN junction formed between a first material of a first conductivity type and a second material of a second conductivity type, the junction has a depth of less than about 50 nm, in the first material the net doping concentration at the junction changes by greater than about one order of magnitude over 10 nm, the maximum value of said first conducting material of said wafer has a surface concentration of greater than about 1.times.10.sup.20 /cm.sup.3.

Formation of ultra-shallow semiconductor junction using microwave

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Carmel, NY, United States of America

David Andrew Lewis