Kla-tencor Technologies Corporation

Kla Tencor Corporation

Sunpower Corporation

Solopower, Inc.

David Aitan Soltz

Taiqing Qiu

Xiuwen Tu

Yehiel Gotkis

Seung Bum Rim

David Lee Brown

Yu-Chen Shen

Kirk Joseph Bertsche

Michael C Johnson

Kieran Mark Tracy

George H Zapalac, Jr

J Kirkwood H Rough

Bulent Mehmet Basol

Marian Mankos

Harald F Hess

Gabor D Toth

John F Heanue

Joseph A Heanue

Mehran Nasser-Ghodsi

Edward Gerald Solomon

Rudy Flores Garcia

Chiyan Kuan

Alexander Jozef Gubbens

Peter Nunan

Edward Michael James

John W Coburn

Ye Yang

Mark Borowicz

David A Crewe

Roger L Kroeze

Mark Lin

Tzu Chin Chuang

Geordie Zapalac

Paul Wieczorek

Aaron Zuo

Muhran Nasser-Ghodsi

Herschel Marchman

Harold Winters

Gregory W Grant

Thierry H C Nguyen

Salvatore T Fahey

Yoann Buratti

Laurence S Horndon

Ryan Manuel Lacerda

M Nasser Ghodsi

Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

Photonic degradation monitoring for semiconductor devices

High throughput systems for photovoltaic UV degradation testing of solar cells, and methods of testing for UV degradation of solar cell during manufacture, are described herein. In an example, a high throughput solar cell testing apparatus includes a plurality of real time ultra-violet (RTUV) testing modules. Each of the RTUV testing modules includes an ultra-violet (UV) light source, an optics assembly for focusing light from the UV light source on a sample area, and a detector for receiving photoluminescence energy from the sample area. The high throughput solar cell testing apparatus also includes an acquisition and control assembly coupled to the plurality of RTUV testing modules.

High throughput system for photovoltaic UV degradation testing

A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.

Inline inspection of photovoltaics for electrical defects

The embodiments of the present invention provide a defect detection process and apparatus to detect defects in solar cell structures. During the process, an input signal from a signal source is applied to a top surface of a transparent conductive layer of a solar cell structure. In response to the input signal, an output signal is generated from a predetermined area of the top surface and detected by a defect detector. The output signal carrying the defect position information is transmitted to a computer and registered in a database. With the position information, an injector is driven to the defect location to apply an insulator to passivate the defect. A finger pattern layer may be formed over the predetermined area after completing the defect detection and passivation processes.

Method and apparatus for detecting and passivating defects in thin film solar cells

The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency.

Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement

A signal conduction channel having a first element that receives electrons at a first end from a vacuum environment, produces photons as the electrons are received, and propagates the photons along a length of the first element to a distal second end, and a second element that receives the photons from the second end of the first element, converts the photons to electrons, and multiplies the electrons, where no additional element is disposed between the second end of the first element and the second element, except optionally at least one of a photon-conductive epoxy, a lens, and an optical coupling plate that touches both the second end of the first element and the second element.

Integrated segmented scintillation detector

Systems and methods for reducing alteration of a specimen during by charged particle based and other measurements systems are provided. One system configured to reduce alteration of a specimen during analysis includes a vacuum chamber in which the specimen is disposed during the analysis and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis. One system configured to analyze a specimen includes an analysis subsystem configured to analyze the specimen while the specimen is disposed in a vacuum chamber and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis.

Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems

Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.

Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis

Methods and systems for preparing a substrate for analysis are provided. One method includes removing a portion of a copper structure on the substrate using an etch chemistry in combination with an electron beam. The etch chemistry is substantially inert with respect to the copper structure except in the presence of the electron beam. Other methods involve forming masking layers on a substrate that will protect the substrate during etching. For example, one method includes exposing a first portion of the substrate to an electron beam. A second portion of the substrate not exposed to the electron beam includes a copper structure. The method also includes exposing the substrate to a fluorine containing chemical. The fluorine containing chemical bonds to the first portion but not the second portion to form a fluorine containing layer on the first portion.

Methods and systems for preparing a copper containing substrate for analysis

A method of measuring properties of a sample using an electron beam. Coordinates of a measurement site on the sample, and a diameter of the electron beam are defined. Multiple measurement locations are determined within the measurement site, using the coordinates of the measurement site and the diameter of the electron beam. The measurement locations are selected such that the electron beam when directed at the multiple measurement locations (either through beam deflection or sample movement) substantially covers the measurement site. The electron beam is directed to the measurement locations and properties of the sample are measured at each of the measurement locations.

Site stepping for electron beam micro analysis

A method of reducing atom ejection from a sample during electron beam bombardment. An electron beam is directed through a low pressure environment toward a surface of the sample. The electron beam thereby impinges on the sample at a target location, and thereby causes characteristic x-ray emission from the target location of the sample. A capping precursor is introduced into the low pressure environment, where the capping precursor forms a capping layer on the surface of the sample at the target location when contacted by the electron beam. The capping layer thereby reduces atom ejection from the sample at the target location, while not appreciably impeding and confounding the characteristic x-ray emission from the target location of the sample.

Capping layer to impede atom ejection

Growing community of inventors

San Jose, CA, United States of America

David Aitan Soltz