Ii-vi Delaware, Inc.

Finisar Sweden Ab

Finisar Corporation

Ii-vi Delware, Inc.

David Adams

Yasuhiro Matsui

Andrei Kaikkonen

Nicolae Chitica

Daniel Mahgerefteh

Shiyun Lin

Bernd Huebner

Xiaojie Xu

Jianxiao Chen

Christopher Daunt

Martin Zirngibl

Per O Granestrand

Jan-Olof Wesström

The′ Linh Nguyen

Robert Lewén

The' Linh Nguyen

Martin Anders Isak Stattin

Efthymios Rouvalis

Lukasz Kumanowski

Per Granestrand

An electro-absorption modulator (EAM) is configured to include an on-chip AC ground plane that is used to terminate the high frequency RF input signal within the chip itself. This on-chip ground termination of the modulation input signal improves the frequency response of the EAM, which is an important feature when the EAM needs to support data rates in excess of 50 Gbd. By virtue of using an on-chip ground for the very high frequency signal content, it is possible to use less expensive off-chip components to address the lower frequency range of the data signal (i.e., for frequencies less than about 1 GHz).

Broadband electro-absorption optical modulator using on-chip RF input signal termination

A spot-size converter includes first and second waveguide structures. The first waveguide structure extends longitudinally along a waveguide axis from a first end to a second end and is configured to support a first optical mode at the first end. The second waveguide structure is formed within the first waveguide structure. The second waveguide structure extends longitudinally between the first end and the second end. The second waveguide structure is configured to support a second optical mode at the second end. The second optical mode has a different diameter than the first optical mode. The second waveguide structure includes a waveguide core that has a first cross-sectional area in a first plane normal to the waveguide axis at the first end and a second cross-sectional area in a second plane normal to the waveguide axis at the second end. The second cross-sectional area is larger than the first cross-sectional area.

Spot-size converter

A wideband electro-absorption modulating (EAM) device is configured to include a ground shield that functions to minimize the spread of an applied AC voltage beyond the limits of the modulator's electrode. The ground shield includes a grounding electrode disposed in a spaced-apart relationship with the modulator electrode along the ridge of the EAM structure, and a grounding termination used to couple the grounding electrode to a suitable ground location. The ground location may be either on-chip (such as the DC ground of the modulator itself) or off-chip (via an off-chip capacitor, with a wirebond connecting the grounding electrode to the capacitor). The use of a ground shield mitigates the effects that changes in the data rate have on effective length of the modulator as seen by the applied data signal.

Electro-absorption optical modulator including ground shield

A semiconductor laser chip-on-carrier (CoC) device comprising:

Laser carrier-on-chip device

A system includes a surface coupled edge emitting laser that includes a core waveguide, a fan out region optically coupled to the core waveguide in a same layer of the surface coupled edge emitting laser as the core waveguide; and a first surface grating formed in the fan out region; and a photonic integrated circuit (PIC) that includes an optical waveguide and a second surface grating formed in an upper layer of the PIC, wherein the second surface grating is in optical alignment with the first surface grating.

Surface coupled systems

A method of manufacturing an integrated semiconductor optical waveguiding device comprising an elongated waveguide, the method comprising:

Method of manufacturing an integrated semiconductor optical waveguiding device

An optical interference modulator comprises a main input, a main output, an optical splitter connected to the main input, first and second MMI couplers, each with a first primary-end access port connected to the splitter; a second primary-end access port connected to the main output; a first secondary-end access port connected to a respective primary waveguide; and a second secondary-end access port connected to a respective secondary waveguide. A light reflector is arranged to reflect light incident from said primary and secondary waveguides back into the same respective waveguide such that light travelling through the respective waveguide from the respective secondary-end access port, after reflection, travels back to the same secondary-end access port. For the MMI couplers, at least one of the respective primary and secondary waveguides comprises a respective light phase modulating device arranged to modulate the phase of light travelling along the corresponding waveguide in either direction.

Optical device

Optical waveguiding part (), which waveguiding part is arranged to convey light through an output facet () of the waveguiding part, which waveguiding part comprises a ridge waveguide comprising a semiconductor substrate () and a semiconductor light-conveying ridge, wherein the output facet is set at an angle (&#x3b1;) in relation to a main direction (z) of light along the said waveguide, so that light travelling in the waveguide along said main direction has an angle of incidence towards the facet of between 2&#xb0; and 14&#xb0; and is reflected towards a first side () of the said ridge, wherein the waveguide comprises an MMI (Multi Mode Interferometer) (), arranged to create an output image substantially at the output facet.

Optical waveguiding part

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Stockholm, Sweden

David Adams