Tokyo Electron Limited

Molecular Imprints, Inc.

David A Vidusek

Sidlgata V Sreenivasan

David C Wang

Kenneth Duerksen

A system and method for forming a mechanically strengthened low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. An upper surface of the low-k dielectric film is then treated in order to increase the film's mechanical strength, or reduce its dielectric constant.

Method and system for using ion implantation for treating a low-k dielectric film

The present invention features a method of patterning a substrate that includes forming from a first material, disposed on the substrate, a first film having an original pattern that includes a plurality of projections. The projections extend from a nadir surface terminating in an apex surface defining a height therebetween. A portion of the first film in superimposition with the nadir surface defines a nadir portion. The nadir portion is removed to expose a region of the substrate in superimposition therewith, defining a plurality of recessions. A second material is disposed upon the first film to form a second film having a surface spaced-apart from the apex surface of the plurality of projections and filling the plurality of recessions to form a multi-film stack. The first film and portions of the second film are removed to create a plurality of spaced-apart projections of the second material on the substrate.

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Austin, TX, United States of America

David A Vidusek