International Business Machines Corporation

David A Sunderland

David C Ahlgren

Mary Joseph Saccamango

Jack Oon Chu

Tze-Chiang Chen

Paul Andrew Ronsheim

Martin Revitz

Shao-Fu S Chu

A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.

Method for making heterojunction bipolar transistor with self-aligned

An image reversal process for self-aligned implants in which a mask opening and plug in the opening are used to enable one implant in the mask opening, another self-aligned implant in the region surrounding the opening, and a self-aligned electrode to be formed in the opening.

Image reversal process for self-aligned implants in planar

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Hopewell Junction, NY, United States of America

David A Sunderland