Air Products and Chemicals, Inc.

David A Roberts

Arthur Kenneth Hochberg

John A Norman

David A Bohling

John C Ivankovits

John Anthony Thomas Norman

Robert Sam Zorich

Charles G Coe

Yoshihide Senzaki

Steven M Kuznicki

Ravi Kumar Laxman

Peter James Maroulis

Andre Lagendijk

George Oleg Voloshin

David L O'Meara

Raymond Nicholas Vrtis

Thomas Lee Ellison

Patrick J Clark

Gregory T Muhr

Melanie Anne Boze

Xinjian Lei

Diwakar Garg

Gauri Sankar Lal

Eugene Joseph Karwacki, Jr

Daniel P Spence

John Anthony Marsella

William Franklin Burgoyne, Jr

Dingjun Wu

Glenn B Alers

Hansong Cheng

Wade Hampton Bailey, Iii

Heather Regina Bowen

Robert E Stevens

John Giles Langan

Stephen Andrew Motika

Bing Ji

Stephen M Fine

Robert McLemore Fleming

Lee Arthur Senecal

Michael Ulman

John Eric Baker

Jinping Wu

Morteza Farnia

James Richard Thurmond

Chenggang Zhou

Geoffrey L Chase

Bo Han

Robert G Bryant

Herman Gene Hockenhull

Felicia Diane Kaminsky

We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate &#x3b2;-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

Materials for adhesion enhancement of copper film on diffusion barriers

A compound having the structure: w-A-x-CY&#x2014;Z(CF), where CY is cyclohexane or substituted cyclohexane, exemplified by 4-trifluoromethyl-4-methylcarboxy-4'-propyl-1,1&#x2032;-(bi)cyclohexane.

Quaternary trifluoromethylcyclohexane derivatives for liquid crystals

This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

Method to protect internal components of semiconductor processing equipment using layered superlattice materials

A prewetted cleaning wipe for cleaning surfaces and having low volatile organic chemical and low nonvolatile residue properties comprising a wipe substrate wetted with an aqueous solution of high purity water and an effective amount of an acetylenic alcohol surface active agent. The surface active agent is preferably an acetylenic diol. Preferred acetylenic diols include dimethyl octynediol and tetramethyl decynediol.

Low VOC cleanroom cleaning wipe

A process and apparatus to deliver both process chemical and solvent for cleaning the process chemical in a solvent purge refill system along with an integral solvent sorption module, in a single 'assembly' that permits ease of shipping, minimal end-user interaction, sufficient solvent for the solvent purge operation, without residual solvent, requiring disposal. This eliminates customer handling of the solvent, and eliminates the customer's need to find a solvent waste facility, as residual solvent can be returned in the same package in one piece/one step.

Multiple contents container assembly for ultrapure solvent purging

In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.

Process for atomic layer deposition of metal films

Volatile precursors for deposition of metals and metal-containing films

This invention relates to an improved process for removing trace levels of Group IVb contaminants from a Group IVb metal tetrahalide of and particularly to a process for removing zirconium tetrachloride from titanium tetrachloride. The improvement resides in contacting a titanium tetrachloride feedstock containing trace impurities of zirconium tetrachloride or hafnium tetrachloride with a sufficient amount of titanium hydride to convert any zirconium tetrachloride or hafnium tetrachloride to a lower volatile compound. The resultant mixture is distilled and the titanium tetrachloride separated from the lower volatile zirconium or hafnium compounds.

Purification of group IVb metal halides

This invention relates to an improvement in a purification process for producing those liquid copper based complexes of &bgr;-diketones and, particularly the monovalent copper complexes of &bgr;-diketones, which are suited for application by chemical vapor deposition in the electronics industry. In the basic process for preparing a copper based complex, a reactive copper compound is reacted with a fluorinated &bgr;-diketonate and an organo source such as an olefinic source or one having acetylenic unsaturation. Purification is effected by contacting reaction product with a double deionized deoxygenated water source and preferably an acid/water source. An aqueous layer and an organic layer are formed with the aqueous layer containing byproducts and the organic phase containing product.

Use of water and acidic water to purify liquid MOCVD precursors

A container for high purity chemicals having an externally placed level sensor to avoid contamination of such chemical and for ready serviceability and a removeable liquid out diptube to facilitate cleaning during refilling or refurbishing, both of which are situated adjacent a sump in the bottom of the container. The container can have a valved inlet and outlet and can be constructed of stainless steel which is electropolished.

High purity chemical container with external level sensor and liquid sump

The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, pyrazoles, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.

Liquid precursor mixtures for deposition of multicomponent metal containing materials

Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.

Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors

The present invention is a composition for deposition of a mixed metal or metal compound layer, comprising a solventless mixture of at least two metal-ligand complex precursors, wherein the mixture is liquid at ambient conditions and the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs. The present invention is also a process for deposition of a multiple metal or metal compound layer on a substrate of an electronic material, comprising: a) providing a solventless mixture of two or more metal-ligand complex precursors which constitute a liquid at ambient conditions, wherein the ligands are the same and are selected from the group consisting of alkyls, alkoxides, halides, hydrides, amides, imides, azides, nitrates, cyclopentadienyls, carbonyls, and their fluorine, oxygen and nitrogen substituted analogs; b) delivering the solventless mixture by direct liquid injection to a flash vaporization zone to vaporize the solventless mixture; c) contacting the substrate under deposition conditions with a resulting vapor of the solventless mixture, and c) depositing a multiple metal or metal compound layer on the substrate from the solventless mixture.

Growing community of inventors

Carlsbad, CA, United States of America

David A Roberts