Signetics

David A Maxwell

David F Allison

Albert P Youmans

1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a semiconductor body which has a substantially uniform thickness in the vicinity of the grid structure and in which the grid structure does not intercept the exposed surface of the semiconductor body, and forming additional grid structure in the semiconductor body joining the first named grid structure so that islands of semiconductor material are formed in the semiconductor body which are isolated from each other and from the support structure. 23. In a method for forming a semiconductor structure utilizing a semiconductor body having a surface, forming a layer of insulating material on the surface of the semiconductor body, forming a recessed grid in the layer of insulating material and extending into the semiconductor body, forming a layer of insulating material on the recessed grid adhering to said surface and having a depth which is insufficient to fill the recessed grid to form a grid structure in a semiconductor body prior to the formation of a semiconductor device in the semiconductor body, forming a support structure upon the grid structure, removing a portion of the semiconductor body and diffusing isolation fences into the semiconductor body which extend and make contact with the layer of insulating material to form a plurality of islands of semiconductor material isolated from each other and from the support structure.

Method for making semiconductor structure

Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating material and then forming grooves in the semiconductor body which extend to the layer of insulating material formed from the semiconductor body. A second layer of insulating material is then formed on the exposed surfaces of the islands. A second support structure is then formed on the second layer of insulating material. Thereafter, the first support structure is removed and circuit devices are fabricated in the isolated islands.

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San Jose, CA, United States of America

David A Maxwell