Micron Technology Incorporated

Round Rock Research, LLC

David A Korn

Terry L Gilton

Keith W Smith

F Daniel Gealy

Noel Rocklein

Cancheepuram V Srividya

John Vernon

Jeff Nelson

The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.

Constructions comprising hafnium oxide and/or zirconium oxide

The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M-M-R- and M-(R-M-): where x is at least 2; where Mis a first metal-containing precursor comprising a first metal, Mis a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term 'directly follows' indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.

ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates

A method of forming an electronic component includes forming first and second conductive materials over a substrate, with the second material having a higher oxidation rate than an oxidation rate of the first material when exposed to a thermal oxidizing atmosphere. The first and second conductive materials are first etched to form a conductive component. The conductive component has opposing outer lateral edges of the first and second conductive materials which span between the opposing outer lateral edges. Second etching is conducted into both of the second material outer lateral edges to recess them inside of the first material outer lateral edges. After the second etching, the substrate is exposed to the thermal oxidizing atmosphere effective to grow an oxide layer over both of the outer lateral edges of the first and second conductive materials. Electronic components are disclosed and claimed independent of any method of manufacture.

Methods of forming electronic components, and a conductive line

In one implementation, first and second layers are formed over a substrate. One of the layers has a higher oxidation rate than the other when exposed to an oxidizing atmosphere. The layers respectively have an exposed outer edge spaced inside of the substrate periphery. Etching is conducted into the higher oxidation rate material at a faster rate than any etching which occurs into the lower oxidation rate material. Then, the substrate is exposed to the oxidizing atmosphere. In another implementation, a stack of at least two conductive layers for an electronic component is formed. The two conductive layers have different oxidation rates when exposed to an oxidizing atmosphere. The layer with the higher oxidation rate has an outer lateral edge which is recessed inwardly of a corresponding outer lateral edge of the layer with the lower oxidation rate. The stack is exposed to the oxidizing atmosphere effective to grow an oxide layer over the outer lateral edges of the first and second layers. In yet another implementation, a transistor comprises a semiconductive substrate and a gate stack formed thereover. The stack in at least one cross section defines a channel length within the substrate of less than 1 micron, with the stack comprising conductive material formed over a gate dielectric layer. An insulative layer is formed on outer lateral edges of the conductive material, with such layer having opposing substantially continuous straight linear outer lateral edges over all conductive material of the gate stack within the one cross section.

Semiconductor processing method

Semiconductor processing methods, methods of forming electronic components, and transistors

A wafer carrier for use in the transportation and storage of semiconductor wafers. More particularly, the invention is a wafer carrier having both a rigid structure and a corrosion resistant coating. The wafer carrier includes a unitary frame having several wafer supports joined by connecting members. The frame is coated with a material, such as a fluoropolymer, which is resistant to corrosive materials typically used in semiconductor fabrication processes.

Wafer carrier

Method of constructing a wafer carrier

Semiconductor processing methods, methods of forming electronic

Wafer carrier having both a rigid structure and resistance to corrosive

A method of making a wafer carrier for use in the transportation and storage of semiconductor wafers includes providing a unitary frame, forming a corrosion resistant coating, such as a fluoropolymer, covering the frame and providing wafer support elements mounted on the frame. A wafer carrier made by the present method may include a unitary frame having several wafer supports joined by connecting members. The frame is coated with a material, such as a fluoropolymer, which is resistant to corrosive materials typically used in semiconductor fabrication processes.

Method of making a carrier for at least one wafer

An oxide etchant and method of etching are provided. The etchant includes at least one fluorine-containing compound and at least one auxiliary component selected from the group of a boron-containing compound and a phosphorus-containing compound.

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Boise, ID, United States of America

David A Korn