Micron Technology Incorporated

Unity Semiconductor Corporation

David A Eggleston

Brady L Keays

Michael Murray

Anthony Moschopoulos

Bruce Lynn Bateman

Louis C Parrillo

Lidia Vereen

Frankie F Roohparvar

Cliff Zitlaw

Bill Radke

Elizabeth Friend

Christophe J Chevallier

Chang Hua Siau

Sri Rama Namala

A method of manufacturing a memory structure includes forming a plurality of vertically-stacked horizontal line layers, interleaving a plurality of electrically conductive vertical lines with the electrically conductive horizontal lines, and forming a memory film at and between intersections of the electrically conductive vertical lines and the horizontal lines. In one embodiment of the invention, the electrically conductive vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each horizontally-adjacent pair of horizontal lines in each horizontal line layer. By configuring the electrically conductive vertical lines and electrically conductive horizontal lines so that a row of vertical lines is positioned between each horizontally-adjacent pair of horizontal lines, a unit memory cell footprint of just 2Fmay be realized.

Vertical cross-point memory arrays

Apparatus and methods provide associative mapping of the blocks of two or more memory arrays such that data, such as pages of data, from the good blocks of the two or more memory arrays can be read in an alternating manner for speed or can be read in parallel for providing data to relatively wide data channels. This obviates the need for processor intervention to access data and can increase the throughput of data by providing, where configured, the ability to alternate reading of data from two or more arrays. For example, while one array is loading data to a cache, the memory device can be providing data that has already been loaded to the cache.

Block addressing for parallel memory arrays

Non-volatile memory devices and methods of their operation are provided. One such non-volatile memory device has an interface and a control circuit. The non-volatile memory device is adapted to identify itself as a boot memory in response to receiving an interrogation request on the interface.

Non-volatile memory device adapted to identify itself as a boot memory

There is provided a method and apparatus for bus negotiation. One such method includes determining a configuration of a first bond pad, the first bond pad indicating whether a host is configured to communicate with a fixed data storage device or a removable data storage device. If the first bond pad indicates the host is configured to communicate with a fixed data storage device, then the method additionally includes determining the configuration of a second bond pad. The second bond pad indicates the supported bus width of the fixed data storage device.

Bus width negotiation

In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive memory cell and a portion of a second two-terminal resistive memory cell within the void. The portions of the two-terminal resistive memory cells may be vertically stacked within the void.

Planar resistive memory integration

Split data error correction code (ECC) circuits including a control circuit coupled to an error correction code (ECC) circuit. The ECC circuit is adapted to generate at least one ECC code from user data of a first physical sector during a data access. The split data ECC circuit is adapted to write the at least one ECC code to a second physical sector if the data access is a write access and to compare the at least one generated ECC code with at least one ECC code stored in a second physical sector if the data access is a read access.

Split data error correction code circuits

Data move operations in a memory device are described that enable identification of data errors. Error detection circuitry in the memory device can be operated using parity data or ECC data stored in the memory. Results of the error detection can be accessed by a memory controller for data repair operations by the controller.

Memory device with error detection

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to implement memory architectures configured to enhance throughput for cross point arrays including memory elements, such as memory elements based on third dimensional memory technology. In at least some embodiments, an integrated circuit includes arrays that include memory elements being formed BEOL above a FEOL logic layer within a boundary in a plane parallel to a substrate, and array lines. Further, the integrated circuit includes array line decoders disposed in the logic layer within a region located coextensive with the boundary and between the substrate and the arrays. In some embodiments, the disposition of peripheral circuitry, such as the array line decoders, under the arrays can preserve or optimize die efficiency for throughput enhancement.

Memory architectures and techniques to enhance throughput for cross-point arrays

A Flash memory device, system, and data handling routine is detailed with a distributed erase block sector user/overhead data scheme that splits the user data and overhead data and stores them in differing associated erase blocks. The erase blocks of the Flash memory are arranged into associated erase block pairs in 'super blocks' such that when user data is written to/read from the user data area of a sector of an erase block of the super block pair, the overhead data is written to/read from the overhead data area of a sector of the other associated erase block. This data splitting enhances fault tolerance and reliability of the Flash memory device.

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San Jose, CA, United States of America

David A Eggleston