Hrl Laboratories, LLC

Dave Chow

Stephen Thomas, Iii

Ken Elliot

A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyimide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate that serves as a foundation for bottom contact layers and a polyimide coating. An ohmic metal contact and emitter metal contact protrude above the polyimide coating exposing the ohmic metal contact and emitter metal contact The contacts are capped with an etch resistant coating thus allowing for the polyimide etch, and other etching processes without adversely affecting the contacts.

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Newbury Park, CA, United States of America

Dave Chow