U.S. Philips Corporation

Date J Noorlag

Arthur M Hoeberechts

Henricus G Maas

Johannes W Van Der Velden

Peter H Kranen

Albertus T Van De Goor

A semiconductor device comprising a first region, which is laterally bounded by a second region comprising a countersunk oxide layer and a highly doped polycrystalline silicon layer, which is disposed thereon and is covered by an oxide layer partly countersunk into it. The side edge of the polysilicon layer adjoins a contact zone, which is obtained by diffusion therefrom and is connected via a current path to a zone of a semiconductor circuit element. The upper side of the polysilicon layer is located at a higher level than that of the first region and the contact zone is connected to the said zone of the semiconductor circuit element via an intermediate region located in the first region below the second oxide layer and having a lower doping than the contact zone.

High efficiency, small geometry semiconductor devices

In a position-sensitive radiation detector having a semiconductor body which at least in the operating condition comprises a high-ohmic zone (11) between two radiation-sensitive diodes (6) provided with connection electrodes (9), a high-ohmic zone (11) between two semiconductor zones (6) provided with connection electrodes (9), can be apparently centered by varying the voltages at the connection electrodes (9) in such a manner that the photocurrents through the diodes (6) are the same. The signals derived therefrom can be supplied to measuring and control systems for, for example, optical reading and writing apparatus and other measuring apparatus.

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Eindhoven, Netherlands

Date J Noorlag