Applied Materials, Inc.

Darshan Thakare

Prerna Sonthalia Goradia

Geetika Bajaj

Gayatri Natu

Jennifer Y Sun

Robert Jan Visser

David Fenwick

Rajkumar Thanu

Jeff Hudgens

Karuppasamy Muthukamatchy

XiaoMing He

Sanni Seppaelae

Arun Dhayalan

Abhijit Basu Mallick

Pramit Manna

Ranga Rao Arnepalli

Nilesh Chimanrao Bagul

Srinivas Gandikota

Yixiong Yang

Jacqueline S Wrench

Nitin Deepak

Suresh Chand Seth

Jennifer Sun

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

Method of forming a fluorinated metal film

Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQR, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R, R, R, R, R, R, R, R, R, R, R, R, R, and Rare independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X', and Y&#x2032; are independently selected from nitrogen (N) and carbon (C).

Methods for forming impurity free metal alloy films

Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.

Flowable gapfill using solvents

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Maharashtra, India

Darshan Thakare