Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Darshan Pagariya

Vishal Sharma

Abhinandan Venugopal

Sourabh Sankule

Akhilesh Yadav

Shivam Mishra

Pradeep Seetaram Hegde

Yuvaraj Kumar CD

A data storage device groups a set of continuous wordlines crossing a data retention threshold together as a band. The set of continuous wordlines are in an open block in the memory. The data storage device then determines whether a number of continuous wordlines in the set is greater than a threshold. If the number of continuous wordlines in the set is greater than the threshold, the data storage device classifies the set of continuous wordlines as an outlier band in the open block.

Data storage device and method for classifying a set of continuous wordlines as an outlier band in an open block

A storage device updates optimal parameters associated with a Thermal Region Tag (TRT). A controller on the storage device assigns a TRT to blocks programmed at a given temperature range and updates an optimal TRT parameters by obtaining a set of representative wordlines and a set of indicative wordlines for a block assigned to the TRT. The controller performs a bit error rate (BER) estimation on indicative wordlines in the set until a valid indicative wordline is found. The controller determines whether a BER Estimation Scan (BES) check is to be performed when the valid indicative wordline is found. In performing the BES check, the controller performs the BER estimation on representative wordlines in the set until a valid representative wordline is found. When a valid representative wordline is found, the controller obtains the optimal TRT parameter and updates the optimal TRT parameter.

Scheme to fetch optimal read parameters by skipping invalid wordlines

A data storage device has a controller that instructs a memory to read memory cells using a number of different read voltage levels and then selects the read voltage level that provides the best read. Instead of sending individual commands for each of the different read voltage levels, the controller sends a single command that specifies an initial read voltage level and a voltage shift, and the memory automatically increments the read voltage level by the voltage shift for each read.

Data storage device and method for power on reset and read error handling

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Darshan Pagariya