Osram Opto Semiconductors Gmbh

Osram Sylvania Inc.

Other

Osram Gmbh

Darshan Kundaliya

Alan Lenef

Adam Scotch

Madis Raukas

Jeffery J Serre

Norwin Von Malm

James A Avallon

David J O'Brien

Gertrud Kräuter

Alan Piquette

Maxim N Tchoul

Kailash C Mishra

Thomas Dreeben

Kathleen A Lawson

Britta Göötz

Britta Goeoetz

Yi Zheng

David Hamby

David W Johnston

Maria J Anc

Jörg Frischeisen

Alexander Behres

John F Kelso

Matthew Stough

Reinhard Streitel

I-Hsin Lin-Lefebvre

Jörg-Erich Sorg

Adam M Scotch

Kalish Mishra

In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

Semiconductor light source with a mirror coating and method

In an embodiment a conversion element includes a first phase and a second phase, wherein the first phase comprises lutetium, aluminum, oxygen and a rare-earth element, wherein the second phase comprises AlOsingle crystals, and wherein the conversion element comprises at least one groove.

Process of manufacturing a conversion element, conversion element and light emitting device comprising the conversion element

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of &#x2264;30 &#x3bc;m.

Optoelectronic component and method for producing an optoelectronic component

A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Light-emitting device with wavelenght conversion layer having quantum dots

A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720&#xb0; C.

A ceramic conversion element, a light-emitting device and a method for producing a ceramic conversion element are disclosed. In an embodiment a ceramic conversion element includes a central region with a structured top surface including a plurality of structure elements and a frame surrounding the central region, the frame having a planar top surface, wherein the central region and the frame are formed as one piece, and wherein the ceramic conversion element is configured to convert primary radiation into secondary radiation of a different wavelength range.

Ceramic conversion element, light-emitting device and method for producing a ceramic conversion element

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component

An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

Optoelectronic component having a conversation element with a high refractive index

A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 &#x3bc;m inclusive.

Method for producing an optic device, optic device and assembly comprising such an optic device

A method for producing a laser activated remote phosphor (LARP) sub-assembly, which may comprise: preparing a target composed of a material; activating the target such that the material is released from the target; directing the material released from the target in the direction of a wavelength converter and depositing the material released from the target onto a major surface of the wavelength converter creating a bonding film.

Method of bonding a laser activated remote phosphor assembly, method of manufacture and a laser activated remote phosphor assembly

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.

Method for producing an optoelectronic component and an optoelectronic component

There is herein described a light source comprising a semiconductor device emitting a primary light, a thermally conductive optic having a reflective coating and a wavelength converter having a front surface and a rear surface. The optic is mounted to the rear surface of the wavelength converter and the primary light impinges on the wavelength converter in an emission region. The wavelength converter converts at least a portion of the primary light into a secondary light that is emitted from the front and rear surfaces of the converter and the optic reflects secondary light emitted from the rear surface back into the emission region. The light source may be used in either transmissive or reflective configurations.

Light source utilizing wavelength conversion

There is herein described a patterned thin-film wavelength converter which comprises a substrate having a first patterned surface with a first pattern, and a thin film deposited on the first patterned surface. The thin film consists of a wavelength converting material and has a second patterned surface that is distal from the substrate. The second patterned surface has a second pattern that is substantially the same as the first pattern of the substrate. An advantage of the patterned thin-film wavelength converter is that post-deposition processing is not required to produce a textured surface on the wavelength converting material. A method of making the patterned thin-film wavelength converter is also described.

Patterned thin-film wavelength converter and method of making same

Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.

Thin film wavelength converters and methods for making the same

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of &#xb1;15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Growing community of inventors

Beverly, MA, United States of America

Darshan Kundaliya