Air Products and Chemicals, Inc.

Ashland, Inc.

Advanced Technology Materials, Inc.

Darryl W Peters

Irl E Ward

Francis W Michelotti

Matthew I Egbe

Roberto John Rovito

Jennifer M Rieker

Floyd L Riddle

Jeffrey A Barnes

Kevin Paul Yanders

Elizabeth L Walker

Ewa Oldak

Shahri Naghshineh

The present invention relates to a method used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. In one aspect, the method involves contacting the substrate with a composition are comprised of a water soluble organic solvent, a sulfonic acid and water.

Aqueous stripping and cleaning composition

Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

Compositions for processing of semiconductor substrates

The invention relates to aqueous, buffered, fluoride containing compositions having a pH of greater than 7.0 to about 11.0. In certain embodiments, the buffered compositions have an extended worklife because pH dependent attributes such as oxide and metal etch rates are stable so long as the pH remains stable.

Aqueous buffered fluoride-containing etch residue removers and cleaners

A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid selected from a carboxylic acid or a polybasic acid and an ammonium salt of the acid in a molar ratio of acid to ammonium salt ranging from 10:1 to 1:10; an organic polar solvent that is miscible in all proportions in water; a fluoride, and water wherein the composition has a pH ranging from about 3 to about 7.

Compositions for the removal of organic and inorganic residues

The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.

The present invention relates to compositions useful in removing photoresist and organic and inorganic residues and processes for removal of photoresists and etch residues. The compositions are aqueous, acidic compositions containing fluoride and organic polar solvents. The compositions are free of glycols and have a low surface tension and viscosity. Corrosion inhibitors are optionally present.

Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature

The invention relates to a method useful in removing etch residue from etcher equipment parts. The compositions used are aqueous, acidic compositions containing flouride and polar, organic solvents. The compositions are free of glycols and hydroxyl amine and have a low surface tension and viscosity.

Method for cleaning etcher parts

A stripping and cleaning composition for the removal of residue from metal and dielectric surfaces in the manufacture of semi-conductors and microcircuits. The composition is an aqueous system including organic polar solvents including corrosive inhibitor component from a select group of aromatic carboxylic acids used in effective inhibiting amounts. A method in accordance with this invention for the removal of residues from metal and dielectric surfaces comprises the steps of contacting the metal or dielectric surface with the above inhibited compositions for a time sufficient to remove the residues.

Photoresist stripper/cleaner compositions containing aromatic acid inhibitors

An aqueous stripping composition comprising a mixture of an organic amine and a corrosion inhibitor which is benzotriazole alone or in combination with gallic acid, its ester or analog. The stripping composition is effective to strip photoresists, residues from plasma process generated organic, metal-organic materials, inorganic salts, oxides, hydroxides or complexes in combination with or exclusive of organic photoresist films at low temperatures with little corrosion of copper or titanium containing substrates.

Aqueous stripping and cleaning compositions

An aqueous and basic stripping and cleaning composition is provided which contains a hydroxylamine, ammonium fluoride, water and optionally DMSO. The pH of the composition is greater than about 8. Also provided is a method of stripping and cleaning utilizing the compositions of the invention.

Basic stripping and cleaning composition

An aqueous and acidic stripping and cleaning composition is provided which contains a polyhydric alcohol, ammonium fluoride, dimethylsulfoxide and water. The pH of the composition is greater than about 4 but less than 7. Also provided is a method of stripping and cleaning utilizing the compositions of the invention. Optionally, the composition may contain a phosphate buffer.

Growing community of inventors

Stewartsville, NJ, United States of America

Darryl W Peters