Other

Samsung Electronics Co., Ltd.

Mavagail Technology, LLC

Texas Instruments Corporation

Intellectual Ventures Holding 83 LLC

Agersonn Rall Group, L.l.c.

Nytell Software LLC

Agerson Rall Group, L.l.c.

Texas Instruments Incorportated

Darryl Gene Walker

Daniel F McLaughlin

Robert N Rountree

Francis Hii

David W Bergman

Dan Cline

An integrated circuit device that has improved write margin at low operating voltages is disclosed. The integrated circuit device can include an SRAM array that has end power select circuits that can include selection circuits that provide a controllable impedance path between a power supply potential and an array power line. A power supply detection circuit may provide an assist enable signal when a power supply potential is low enough that write assist is needed. A power control circuit may provide end power control signals to end power select circuits to selectively control an impedance path between a power supply potential and an array power line to provide an I-R drop to a selected memory cell. In this way, write margins may be improved at low operating voltages.

Integrated circuit device including an SRAM portion having end power select circuits

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.

ESD protection for integrated circuit devices

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

Temperature sensor circuits for integrated circuit devices

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature sensor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

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San Jose, CA, United States of America

Darryl Gene Walker