Alliance Semiconductor Corporation

Darryl G Walker

Chitranjan N Reddy

Subramani Kengeri

Kenneth A Poteet

A static random access memory (SRAM) (10) operating in synchronism with an external clock is disclosed. The synchronous SRAM (10) includes a transparent address circuit (14) for decoding an external address in the set-up time prior to the rising edge of the external clock. A timing and control circuit (18) generates a word line enable (WLE) signal in synchronism with the rising edge of the external clock. When active, WLE activates a word line driver (34), when inactive, WLE equalizes the bit lines. WLE is applied to a first delay circuit (60) to generate a sense signal (SA). SA activates a sense circuit (46) and deactivates the WLE signal. Consecutive pipelined accesses are achieved such that, as an address is decoded, the bit lines are equalizing and the data from the previous address are propagating through a data I/O path (16).

Growing community of inventors

Santa Clara, CA, United States of America

Darryl G Walker