Northrop Grumman Systems Corporation

Darren Thomson

Narsingh Bahadur Singh

Andre E Berghmans

Brian Paul Wagner

David A Kahler

David J Knuteson

Michael Edward Aumer

Aaron A Pesetski

Rowland C Clarke

Mike Aumer

Michel E Aumer

Brian P Wagner

Andre Berghmans

David Kahler

A SiMC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC SiMC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

Semiconductor heterojunction devices based on SiC

A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of &#x3b2;- and &#x3b3;-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

Nuclear radiation detection system

A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)(SiC)without any buffer layer is disclosed. The (AIN)(SiC)alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)(SiC)alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Solid solution wide bandgap semiconductor materials

A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.

Semiconductor light source and method of making

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Ellicott City, MD, United States of America

Darren Thomson