International Business Machines Corporation

Darren N Dunn

Chih-Chao Yang

Lawrence Alfred Clevenger

Timothy Joseph Dalton

Thomas M Shaw

Yun-Yu Wang

James J Demarest

Michael Wayne Lane

Darryl D Restaino

Philip L Flaitz

Stefanie Ruth Chiras

Chester T Dziobkowski

James R Lloyd

An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiO&#x2014; or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.

Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer

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Fishkill, NY, United States of America

Darren N Dunn