Cornell University

University of Michigan

The Penn State Research Foundation

Other

Samsung Electronics Co., Ltd.

Wisconsin Alumni Research Foundation

University of Missouri

Oregon State University

Forschungsverbund Berlin E.v.

Darrell G Schlom

Ramamoorthy Ramesh

Zi-Kui Liu

Rachel Steinhardt

John Thomas Heron

Sasikanth Manipatruni

Eunsun Kim

Chia-Ching Lin

Jooho Lee

Yongsung Kim

Woojin Lee

Changseung Lee

Kiyoung Lee

Chang-Beom Eom

Kyuho Cho

Joan M Redwing

Myoungho Jeong

Jisung Park

Hyosik Mun

Xiaoxing Xi

Mario Brutzam

Hanjong Paik

Alexej Pogrebnyakov

Xianghui Zeng

Megan Holtz

Rachel A Steinhardt

Megan E Holtz

Mostafizur Rahman

Jiaxin Sun

Kyle Shen

Christopher Parzyck

Kelin Kuhn

Christo Guguschev

Shun-Li Shang

Brandon J Bocklund

Kathy Azizie

Felix V E Hensling

Patrick Vogt

Long-Qing Chen

Kyung-Jin Choi

Zhe Wang

Gerhard H Olsen

Natalie M Dawley

Craig J Fennie

Peter Benjamin Meisenheimer

Magnetoelectric spin-orbit logic (MESO) devices comprise a magnetoelectric switch capacitor coupled to a spin-orbit coupling structure. The logic state of the MESO device is represented by the magnetization orientation of the ferromagnet of the magnetoelectric switch capacitor and the spin-orbit coupling structure converts the magnetization orientation of the ferromagnet to an output current. MESO devices in which all or at least some of the constituent layers of the device are perovskite materials can provide advantages such as improved control over the manufacturing of MESO devices and high quality interfaces between MESO layers due to the lattice matching of perovskite materials.

Perovskite-based magnetoelectric spin-orbit logic devices

Various embodiments disclosed herein provide for several methods of fabricating p-type semiconductors with industrially relevant hole mobilities that are back end of the line (BEOL) compatible. A first method of fabrication includes forming a buffer layer on a substrate, forming a palladium oxide layer over the buffer layer, annealing the palladium oxide layer, and then forming a cap layer over the palladium oxide layer, then cooling the stack, wherein each step is performed at a variety of predefined temperatures. Each of the substrate, buffer layer and cap layer can be magnesium oxide. A second method includes forming a palladium oxide layer over a titanium dioxide substrate, annealing the stack, and then cooling the stack, all performed at a different variety of predefined temperatures.

Correlated orbitals yield high-mobility, back-end-of-line compatible p-type oxide semiconductor

A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.

Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect

A ferroelectric device includes a substrate, a first electrode on the substrate, and a hexagonal ferroelectric material on the first electrode. The first electrode comprises a single crystal epitaxial material. By using a single crystal epitaxial material for an electrode to a hexagonal ferroelectric material, a high-quality material interface may be provided between these layers, thereby improving the performance of the ferroelectric device by allowing for a reduced coercive field.

Ferroelectric and multiferroic material structures

The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of

Method and setup for growing bulk single crystals

Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (GaO) film, a molecular beam including a suboxide of gallium (GaO) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.

Suboxide molecular-beam epitaxy and related structures

A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.

Multiferroic heterostructures

A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

Thin-film structure and method of manufacturing the same

A strained thin film structure includes a substrate layer formed of a crystalline scandate material having a top surface, and a strained layer of crystalline ferroelectric epitaxially grown with respect to the crystalline substrate layer so as to be in a strained state and at a thickness below which dislocations begin to occur in the crystalline ferroelectric layer. An intermediate layer may be grown between the top surface of the substrate layer and the ferroelectric layer wherein the intermediate layer carries the lattice structure of the underlying substrate layer. The properties of the ferroelectric film are greatly enhanced as compared to the bulk ferroelectric material, and such films are suitable for use in applications including ferroelectric memories.

Strain-engineered ferroelectric thin films

Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Method for producing boride thin films

A ferroelectric memory cell formed on a monocrystalline silicon underlayer, either an epitaxial silicon contact plug to a transistor source or drain or silicon gate region for which the memory cell forms a non-volatile gate. A conductive barrier layer of doped strontium titanate, whether cationically substituted, such by lanthanum or niobium for strontium and titanium respectively, or anionically deficient, is epitaxially grown over the silicon, and a lower metal oxide electrode layer, a ferroelectric layer and an upper metal oxide electrode layer are epitaxially grown on the barrier layer. No platinum barrier is needed beneath the ferroelectric stack. The invention can be applied to many other functional oxide materials of the Ruddlesden-Popper and devices including micromachined electromechanical (MEM) devices and ferromagnetic tri-layer devices.

Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon

Growing community of inventors

Ithaca, NY, United States of America

Darrell G Schlom