Hewlett-packard Development Company, L.p.

Hewlett-packard Company

Samsung Electronics Co., Ltd.

Darrel R Bloomquist

Manoj K Bhattacharyya

Thomas C Anthony

James E Opfer

James Clifford Anderson

Sarah Morris Brandenberger

Bangalore Ramaswamiengar Natarajan

George A Drennan

Andrew L Van Brocklin

Kenneth Kay Smith

Peter James Fricke

Kenneth James Eldredge

Arun K Agarwal

Michael B Jacobson

Anthony Peter Holden

Robert J Lawton

Thomas W Von Alten

Judy Bloomquist, Legal Representative

David H McIntyre

Stephan P Howe

Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.

Methods of forming magnetic memory devices

A magnetic random access memory array includes a data storage layer having an easy axis. A non-linear first conductor is positioned on a first side of the data storage layer, wherein a portion of the first conductor has an angle of orientation that is perpendicular to the easy axis. A non-linear second conductor is positioned on a second side of the data storage layer, wherein a portion of the second conductor also has an angle of orientation that is perpendicular to the easy axis.

MRAM parallel conductor orientation for improved write performance

A write line structure for a magnetic memory cell includes a write conductor having a front surface facing the memory cell, a back surface and two sides surfaces. A cladding layer is disposed adjacent a portion of the front surface of the write conductor, with the cladding layer terminating at spaced first and second poles adjacent the front surface of the write conductor. A data storage layer is operatively positioned adjacent the cladding layer. The distance between the poles is less than the width of the write conductor. The width of the data storage layer may be greater than or less than the distance between the poles.

Method and article for concentrating fields at sense layers

A head cleaning device that utilizes a cleaning pad in which a multiplicity of fibers are integrated into and project from a backing by, for example, sewing or weaving the fibers into the backing. Preferably, the fibers and backing are made from an electrically conductive or statically dissipative material to minimize electro-static charge build up. The cleaning device may be incorporated into a tape drive that includes a transducer head, tape guides configured to guide the tape over the head and a cleaning mechanism. The cleaning mechanism, which is configured to engage the head, includes the cleaning pad mounted to a carrier disposed near the head. The cleaning pad is constructed of a multiplicity of fibers integrated into and projecting from the backing.

Tape drive head cleaner

A memory cell includes a magnetic data storage layer, a magnetic reference layer, and an insulating layer between the data storage layer and the reference layer. A resistive layer having a known electrical resistance is positioned adjacent the insulating layer.

Magnetic memory cell

A magnetic random access memory module includes a magnetic memory array. A permeable metal layer extends over a first side of the magnetic memory array. An electrically insulating layer is disposed between the permeable metal layer and the magnetic memory array.

Magnetic shielding for MRAM devices

A magnetic memory device has a plurality of write lines and a plurality of memory cells. Each of the plurality of memory cells are operatively positioned between a corresponding pair of the plurality of write lines. Each of the plurality of memory cells has a sense layer and a reference layer separated by an insulating layer. The reference layer of each of the plurality of memory cells includes a high coercivity permanent magnet.

Magnetic memory device

A magnetic memory includes a circuit configured to apply a reverse magnetic field to one or more half-selected magnetic memory cells to improve half-select margin in the magnetic memory.

Magnetic memory using reverse magnetic field to improve half-select margin

A read-only memory device is described having non-volatile memory cells that include a memory component connected between electrically conductive traces. A memory component is formed to include a resistor that indicates a resistance value when a potential is applied to a selected memory cell. The resistance value of a memory component in an individual memory cell corresponds to multiple logical bits. The resistance value of a memory component corresponding to a set of logical bits can be based on a thickness and/or an area of electrically resistive material that forms the memory component, and/or based on the geometric shape of the memory component, where different geometric shapes of the electrically resistive material have different resistance values that correspond to different sets of logical bits.

Multiple logical bits per memory cell in a memory device

A method is provided for cleaning a transducer head in a tape drive. The method includes the steps of: providing a tape drive with a head cleaning device, a data tape cartridge having data tape, and a cleaning tape cartridge having cleaning tape; detecting error rate for the transducer head with the data tape; determining when the detected error rate exceeds a specified level; and when the detected error rate exceeds a specified level, loading the cleaning tape cartridge into the tape drive and running cleaning media on the cleaning tape over the transducer head to clean the transducer head. Another method includes using a head cleaning device to clean the transducer head when there is an identified need, or as a preventative measure.

Linear tape drive head cleaning process

This invention is a tape drive which includes a transducer head, a tape carrier, and a tape displacement structure. The tape carrier is provided in association with the transducer head, and is configured to support and move a tape along a tape travel path within the tape drive. The tape carrier moves the tape in contact with the transducer head along the tape travel path during at least one of a read operation and a write operation. The tape displacement structure is provided in association with the transducer head, and is configured to engage and bias a received tape from the tape travel path to a retracted tape travel path. The retracted tape travel path is spaced apart from the transducer head. The tape carrier is operative to move the retracted tape across the tape displacement structure, spaced apart from the transducer head. The tape carrier prevents at least one of transducer wear and transducer contamination caused by contact of the tape moving against the transducer head. A method is also provided.

Head cleaner for linear tape drive that also functions as a head

Magnetic tape (13) on a supply reel (11) is provided with a trailing end leader (27) which has an abrasive cleaning characteristic. In order to effectively use the leader with the cleaning characteristic, the tape is fully unreeled to expose the abrasive leader (27) only when a requirement to clean the tape head transducers is sensed. During normal operation, the trailing leader (25) which includes the cleaning leader (27) is not exposed to the tape transducer head, but instead remains on the supply reel.

Integrated cleaning and leader tape

A magnetic recording disk has a layered structure comprising a metal substrate, a layer of NiP atop the metal substrate, the NiP layer having a surface roughness of less than 2.0 nanometers RMS, a metal layer over the polished NiP layer, the metal layer having a desired textured outer surface as a result of the sputter deposition, the textured outer surface being characterized by a cobblestone-like metallic grain structure with between 10 and 100 grains per square micron, an RMS surface roughness of between 1.0 and 8.0 nanometers, and with peak heights as measured from the mean plane of the surface over a 10 micron square area of between 2.0 and 20.0 nanometers, a magnetic layer atop the metal layer.

Growing community of inventors

Meridian, ID, United States of America

Darrel R Bloomquist