Memc Electronic Materials, Inc.

Darrel M Harris

Henry Frank Erk

Yun-Biao Xin

Dennis Buese

Kan-Yin Ng

Giovanni Negri

Stephen Wayne Hensiek

Harold E Hall, Jr

James Jose

Gene Hollander

A process for forming a semiconductor wafer which is single side polished improves nanotopology and flatness of the polished wafer. The process reduces the effect of back side surface features, such as edge ring phenomena and back side laser marks, on nanotopology, thereby improving oxide layer uniformity for chemical/mechanical planarization (CMP) processing, and flatness on the polished front side of the wafer after polishing. The wafer is mounted on a polishing block by wax. The edge ring causes certain deformation and stress in the wafer upon mounting, which is held by the wax. After mounting, the wax is heated to allow the wafer to relax, removing the stress, without degrading the bond of the wafer to the polishing block. The wafer is polished and removed from the polishing blocks. The polished surface substantially retains its shape after being de-mounted from the block.

Process for reducing surface variations for polished wafer

A method for mounting a semiconductor wafer on a polishing block to hold the semiconductor wafer during polishing. The method comprises the steps of providing a polishing block having a surface for mounting the semiconductor wafer, coating the polishing block surface with a bonding agent, applying radiant heat to the polishing block and bonding agent to soften the bonding agent, and applying the semiconductor wafer to the softened bonding agent. The step of applying radiant heat to the polishing block and bonding agent is performed by a radiant heater in a dry environment.

Radiant polishing block heater

Growing community of inventors

Kirkwood, MO, United States of America

Darrel M Harris