Nantero, Inc.

Darlene Hamilton

Thomas Rueckes

H Montgomery Manning

Feng Gu

C Rinn Cleavelin

Rinn Cleavelin

Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via plasma treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via CVD treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via an inert ion gas implant.

Methods for adjusting the conductivity range of a nanotube fabric layer

A method of adjusting a resistive change element using a reference is disclosed. The method comprises inspecting a resistive change element to determine a first state; comparing the first state to a reference wherein said reference provides stimulus parameters corresponding to a transition from the first state to a second state; and applying the stimulus parameters to the resistive change element. A resistive change memory cell array is also disclosed.

Method for adjusting a resistive change element using a reference

A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations&#x2014;for example, a programming pulse of a predetermined voltage level and pulse width&#x2014;on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. If this initial value is above the second threshold value but below the first threshold value, a second set of programming parameters are used within the programming operation.

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Lacey, WA, United States of America

Darlene Hamilton