International Business Machines Corporation

Shin-etsu Chemical Co., Ltd.

Globalfoundries Inc.

Globalfoundries U.S. 2 LLC

Dario Leonardo Goldfarb

Martin Glodde

Ekmini Anuja De Silva

Daniel A Corliss

Wayne Martin Moreau

Nelson M Felix

Kenneth John McCullough

John Patrick Simons

Charles Jesse Taft

Libor Vyklicky

Fee Li Lie

John Michael Cotte

Kamal Kumar Sikka

Keith Randal Pope

Dinesh Gupta

Wai-Kin Li

Wu-Song S Huang

Daniel Sanders

David Robert Medeiros

Donald Francis Canaperi

Sean David Burns

Jennifer Church

Jing Guo

Dmitriy Shneyder

Rudy J Wojtecki

Dirk Pfeiffer

Pushkara Rao Varanasi

Raschid Jose Bezama

Sen Liu

Steven J Holmes

Matthew Earl Colburn

Stefan Harrer

Linda Karin Sundberg

Colin J Brodsky

Bharat Kumar

Michael James Lercel

Takeshi Kinsho

Hariklia Deligianni

Masaki Ohashi

Yann Mignot

Robert David Allen

Seiichiro Tachibana

Stephen Mark Rossnagel

Gustavo Alejandro Stolovitzky

Kafai Lai

Indira P Seshadri

John Christopher Arnold

Stanislav Polonsky

Mahmoud M Khojasteh

Hsinyu Tsai

Hongbo Peng

Ankit Vora

Hoa D Truong

Xiaoyan Shao

Ranee W Kwong

Kevin R Winstel

Kazumi Noda

Steven A Scheer

Shafaat Ahmed

Luisa Dominica Bozano

Ravi K Bonam

Iqbal Rashid Saraf

Kurt R Kimmel

Pamela E Jones

Kafal Lai

David V Horak

Kevin K Chan

Ali Afzali-Ardakani

Hemanth Jagannathan

Qinghuang Lin

Ratnam Sooriyakumaran

Hosadurga K Shobha

Chi-Chun Liu

Xiao Hu Liu

Deborah A Neumayer

Robert L Bruce

Gregory Michael Wallraff

Phillip Joe Brock

Joy Cheng

Yiheng Xu

Sebastian Ulrich Engelmann

Kuang-Jung Chen

Glenn John Martyna

Scott David Halle

Binquan Luan

Hongwen Yan

Karen Elizabeth Petrillo

George Gabriel Totir

Marinus Hopstaken

Dario Gil

Scott Josef Bukofsky

Alan C Thomas

Shozo Shirai

Luciana Meli

Michael M Crouse

Javier J Perez

Masahiro Yamazaki

Edward R Engbrecht

Robert Allen David

Ali Afzali-Azdakani

A method of forming a multi color resist structure includes providing a substrate including an underlayer material; forming a first organic planarizing layer on the substrate; forming a first anti reflecting layer on the first organic planarizing layer, forming and developing a first patterned resist on the first anti reflecting layer; forming a second organic planarizing layer on the first anti reflecting layer and on the first patterned resist; forming a second anti reflecting layer on the second organic planarizing layer and forming and developing the second patterned resist, wherein the first patterned resist is a non-chemically amplified resist (n-CAR) or metal resist and the second patterned resist is CAR organic resist.

Litho-litho-etch (LLE) multi color resist

A method of making an adhesion layer of an extreme ultraviolet (EUV) stack is presented. The method includes grafting an ultraviolet (UV) sensitive polymer brush on a hardmask, the polymer brush including a UV cleavable unit, depositing EUV resist over the polymer brush, exposing the EUV resist to remove the EUV resist in exposed areas by applying a developer, and flooding the exposed area with a UV light and a solvent developer to remove exposed portions of the polymer brush.

Polymer brush adhesion promoter with UV cleavable linker

Alternating copolymers having hydrocarbon-substituted terminal units and repeat units each containing two different monomer units with extreme ultraviolet (EUV)-absorbing elements are disclosed. Alternating copolymers having organic terminal units and repeat units each containing a monomer unit with an EUV-absorbing element and an organic monomer unit are also disclosed. A process of forming a polymer resist, which includes providing an alternating copolymer having repeat units with at least one EUV-absorbing monomer unit and replacing end groups of the alternating copolymer with unreactive terminal units, is disclosed as well.

Alternating copolymer chain scission photoresists

A surface treatment composition and methods for improving adhesion of an organic layer on a titanium-containing hardmask includes forming a self-assembled monolayer on a surface of the titanium-containing hardmask prior to depositing the organic layer. The self-assembled monolayer is formed from a blend of alkyl phosphonic acids of formula (I): X(CH)POOH(I), wherein n is 6 to 16 and X is either CHor COOH, wherein a ratio of the methyl terminated (CH) alkyl phosphonic acid to the carboxyl terminated (COOH) alkyl phosphonic acid ranges from 25:75 to 75:25.

Surface treatment of titanium containing hardmasks

An adhesion promoter composition comprising at least one of the following compounds: (a) a cyclic compound having the formula: (b) a non-cyclic compound having the formula: wherein Rand Reach independently represents a non-photoactive phenyl, a photoactive phenyl or a C-Calkyl; Rrepresents a non-photoactive phenyl; Rrepresents a photoactive phenyl; W represents Si or Ge; n represents an integer of value greater than 1;m represents an integer between 0 and 1.

Adhesion promoters

The subject disclosure relates to 3D microelectronic chip packages with embedded coolant channels. The disclosed 3D microelectronic chip packages provide a complete and practical mechanism for introducing cooling channels within the 3D chip stack while maintaining the electrical connection through the chip stack. According to an embodiment, a microelectronic package is provided that comprises a first silicon chip comprising first coolant channels interspersed between first thru-silicon-vias (TSVs). The microelectronic chip package further comprises a silicon cap attached to a first surface of the first silicon chip, the silicon cap comprising second TSVs that connect to the first TSVs. A second silicon chip comprising second coolant channels can further be attached to the silicon cap via interconnects formed between a first surface of the second silicon chip and the silicon cap, wherein the interconnects connect to the second TSVs.

Three-dimensional microelectronic package with embedded cooling channels

A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer.

Graded hardmask interlayer for enhanced extreme ultraviolet performance

A metal brush layer is provided. The metal brush layer includes a polymer backbone including at least one grafting unit, G, attached to the polymer backbone, and a plurality of metal-containing moieties, M, attached to the polymer backbone.

Metal brush layer for EUV patterning

A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography

A stacked semiconductor microcooler includes a first and second semiconductor microcooler. Each microcooler includes silicon fins extending from a silicon substrate. A metal layer may be formed upon the fins. The microcoolers may be positioned such that the fins of each microcooler are aligned. One or more microcoolers may be thermally connected to a surface of a coolant conduit that is thermally connected to an electronic device heat generating device, such as an integrated circuit (IC) chip, or the like. Heat from the electronic device heat generating device may transfer to the one or more microcoolers. A flow of cooled liquid may be introduced through the conduit and heat from the one or more microcoolers may transfer to the liquid coolant.

Semiconductor microcooler

A stacked semiconductor microcooler includes a first microcooler and a second microcooler. The microcoolers may be positioned such that the fins of each microcooler are vertically aligned. The microcoolers may include an inlet passage to accept coolant and an outlet passage to expel the coolant. One or more microcoolers may be thermally connected to an electronic device heat generating device, such as an integrated circuit (IC) chip, or the like. Heat from the electronic device heat generating device may transfer to the one or more microcoolers. A flow of cooled liquid may be introduced through the passages and heat from the one or more microcoolers may transfer to the liquid coolant.

A semiconductor structure includes a semiconductor substrate and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack includes a resist layer formed over one or more additional layers. The semiconductor structure further includes a metal-containing top coat formed over the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Method to improve adhesion of photoresist on silicon substrate for extreme ultraviolet and electron beam lithography

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Mohegan Lake, NY, United States of America

Dario Leonardo Goldfarb