Invisage Technologies, Inc.

Invisage Inc.

Dario Clocchiatti

Emanuele Mandelli

Aurelien Philippe Bouvier

Zachary Michael Beiley

Ralph Beaudouin

Lionel Barrymore Joseph Barrow

In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.

Image sensors with noise reduction

In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.

Scaling down pixel sizes in image sensors

In various embodiments, methods and related apparatuses for scaling down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.

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Mountain View, CA, United States of America

Dario Clocchiatti