Stmicroelectronics S.r.l.

Cost-fer S.r.l.

Dario Bianchi

Davide Ugo Ghisu

Sandro Rossi

Federico Guanziroli

Marco Sambi

Dario Ripamonti

A transmission channel transmits high-voltage pulses in a transmission phase and receives echoes of the high-voltage pulses in a receiving phase. The transmission channel includes a buffer with anti-memory circuitry to couple drain conduction terminals of buffer transistors of a high-side of a buffer of the transmission channel to a low-side reference voltage of a low-side of the buffer and couple drain conduction terminals of buffer transistors of the low-side of the buffer to a high-side reference voltage of the high-side of the buffer during the clamping phase.

Transmission channel for ultrasound applications

A level shifter circuit includes: an input stage for receiving an input signal switchable between a first and a second input level and an output stage to produce a drive signal for the load that is switchable between a first and a second output level. A level translator translates the input signal switching between the input levels into the output stage switching between the output levels. A feedback element coupled to the output stage transfers to the input stage a feedback signal representative of the output level of the output stage. The input stage includes control circuitry sensitive to the input signal and the feedback signal for detecting undesired switching of the output stage between the first and second output levels occurring in the absence of input signal switching between the first and second input levels. The control circuitry inverts the output level of the output stage resulting from undesired switching.

Level shifter circuit, corresponding apparatus and method

A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.

Diode with reduced recovery time for applications subject to the current recirculation phenomenon and/or to fast voltage variations

A transmission channel transmits high-voltage pulses and receives echos of the high-voltage pulses. The transmission channel includes a buffer with anti-memory circuitry to couple drains of the buffer transistors to voltage reference terminals during a clamping phase.

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Suzzara, Italy

Dario Bianchi