Novellus Systems Incorporated

Other

Nanoconduction, Incorporated

Darin Scott Olson

Tirunelveli Subramamam Ravi

Carlos Dangelo

Jerrod Paul Krebs

T S Ravi

Richard S Swope

Heat sink structures employing multi-layers of carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. In one embodiment, the nanotubes are cut to essentially the same length over the surface of the structure. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Integrated circuit micro-cooler having multi-layers of tubes of a CNT array

A hydrogen-containing chemical species is included in the reactant gas mixture in a plasma-enhanced CVD process for forming a carbon-containing dielectric film. The CVD reactant gas mixture contains silicon, oxygen, hydrogen and carbon atoms for forming a novel carbon-containing silicon oxide film in which both Si&mdash;C and Si&mdash;H bonds are present. Because dielectric material deposited in accordance with the invention has a significant number of Si&mdash;H bonds, which are more robust than Si&mdash;C bonds, it is more resistant to undesired etching and other physical changes during fabrication than dielectric material formed by conventional methods. A method in accordance with the invention allows a faster deposition rate. A dielectric film formed in accordance with the invention has enhanced uniformity characteristics and a dielectric constant less than 3.

Method and apparatus for use of hydrogen and silanes in plasma

A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the rf bias. Preferably, a gasified organic precursor compound comprising silicon, oxygen and carbon atoms is flowed into the plasma CVD reaction chamber. Preferably, no reactive oxygen gas is used in the reaction chamber.

Pulsed or tailored bias for filling gaps with low dielectric constant material

An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is used in the reaction chamber. A thin film of carbon-containing low dielectric constant silicon oxide material is deposited and simultaneously etched in the reaction chamber to fill a gap having a high aspect ratio with low dielectric constant insulator material.

Deposition of low dielectric constant thin film without use of an oxidizer

A point-of-use vaporization system for use in Chemical Vapor Deposition having a first delivery member for delivering a liquid precursor to a vaporization point, a second delivery member for separately delivering a solvent to the vaporization point, and a frit for vaporizing the precursor and solvent at the vaporization point.

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Menlo Park, CA, United States of America

Darin Scott Olson