The University of New Mexico

Sandia Corporation

Darin Leonhardt

Sang M Han

Swapnadip Ghosh

Paul Davids

Christopher T Rodenbeck

Paul Gilbert Clem

Christopher Nordquist

John F Klem

David W Peters

Jin K Kim

Sean Michael Scott

Joel R Wendt

Joyce Olsen Custer

Tyler Scott Jordan

Jeff Hunker

Steven L Wolfley

Josephine Sheng

The present invention related to self-limiting filters, arrays of such filters, and methods thereof. In particular embodiments, the filters include a metal transition film (e.g., a VOfilm) capable of undergoing a phase transition that modifies the film's resistivity. Arrays of such filters could allow for band-selective interferer rejection, while permitting transmission of non-interferer signals.

Self-limiting filters for band-selective interferer rejection or cognitive receiver protection

Lattice-mismatched semiconductor devices having a substrate, a first epitaxial film disposed thereon, a dielectric material, and a second epitaxial film. The first epitaxial film contains etch pits that extend from the outer surface of the first epitaxial film into the first epitaxial film. The dielectric material is disposed within the etch pits and blocks at least some of the threading dislocations in the first epitaxial film from propagating into the second epitaxial film. Semiconductor devices containing a silicon (Si) substrate or a silicon germanium (SiGe) substrate, a germanium (Ge) film disposed over the substrate, and a dielectric material. Methods for producing such semiconductor devices.

Low defect density lattice-mismatched semiconductor devices and methods of fabricating same

An embodiment of the present disclosure is directed to a semiconductor device. The semiconductor devise comprises a substrate. An epitaxially grown semiconductor material is disposed over at least a portion of the substrate. A nanotemplate structure is disposed at least partially within the semiconductor material. The nanotemplate structure comprises a plurality of dielectric nanoscale features defining a plurality of nanoscale windows. An air gap is disposed between at least a portion of one or more of the nanoscale features and the semiconductor material.

Semiconductor device comprising epitaxially grown semiconductor material and an air gap

Selective epitaxial overgrowth comprising air gaps

An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 &#x3bc;m that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

Infrared nanoantenna apparatus and method for the manufacture thereof

Exemplary embodiments provide methods for planarizing a semiconductor surface. In embodiments, the disclosed planarizing methods can include a chemical mechanical planarization (CMP) process using a slurry-free solution that includes hydrogen peroxide (HO) but is free of particles such as oxide particles. A semiconductor surface (e.g., germanium) can then be planarized to provide a desirable surface roughness. In embodiments, high-quality Group III-V materials can be formed on the planarized semiconductor surface.

Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers

Exemplary embodiments provide methods of forming semiconductor devices, by which defects formed upon nucleation and coalescence of semiconductor islands can be reduced or eliminated. In one embodiment, an annealing process can be performed prior to coalescence of the semiconductor islands into a continuous semiconductor layer. In another embodiment, high-quality Group III-V materials can be formed on the continuous semiconductor layer.

Defect removal in Ge grown on Si

Growing community of inventors

Albuquerque, NM, United States of America

Darin Leonhardt