US Government As Represented by the Secretary of the Army

Raytheon Company

Darin J Sharar

Adam A Wilson

Cory R Knick

David H Altman

Gabriel L Smith

Gregory P Schaefer

Brian Donovan

Brendan M Hanrahan

Philip M Henault

Dennis L Waldron

Christopher H Peters

Ronald Warzoha

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include, but are not limited to, structural features such as interfaces, grain boundaries, and point scattering sites, for example, that are designed to scatter heat carriers while allowing electrons to pass through the material. Some embodiments herein involve designing selected stacks of alternating or sequential material pairs within sensor interconnects.

Phonon disruptors for increased thermal resistance without sacrificing electrical signal quality in thermal sensors

Sensor interconnects and supports and methods of making them utilize phonon disruptors for increased thermal resistance while maintaining acceptable electrical signal quality in materials. Phonon disruptors include the use of an electrically conductive alloy material or intermetallic material of at least two or more elements to promote scattering of phonons. These materials are selected to scatter heat carriers while allowing electrons to pass through the material.

Phonon disruptors for increased thermal resistance without sacrificing electrical signal quality in thermal sensors using alloy and intermetallic materials

A heat exchange component includes a part configured for exchanging thermal energy, the part is formed of at least one solid state Martensitic transformation phase change material which is configured to readily undergo a solid-solid martensitic transformation from one crystalline structure to another different crystalline structure during a change in temperature in the normal and/or anticipated operating temperatures of the heat exchange component. In some embodiments, the system further includes a temporally-evolving external temperature/heat source which changes the temperature and resultant phase of the solid-state phase change material. The temporally-evolving external temperature/heat source may involve a solid conducting material or electronic/photonic component, a fluid, a plasma, and/or a radiation source. The heat exchange component may be configured as a flat plate, tube, finned structure, porous structure, graded structure, cold plate, heat exchanger, condenser, evaporator, or any component generally regarded as a thermal energy storage or heat transfer structure in various embodiments.

Solid state martensitic transformation phase change material components for thermal energy storage and transient heat transfer systems

An electronic assembly including a thermal capacitor. An electronic substrate of the electronic assembly includes one or more insulating layers and one or more conductor layers provided along the one or more insulating layers. The one or more conductor layers including a conductive material. A shape memory thermal capacitor is received in the electronic substrate. The shape memory thermal capacitor includes a shape memory core including a shape memory material.

Shape memory thermal capacitor and methods for same

A method of cooling includes providing an elastocaloric material; continuously applying a force on the elastocaloric material to cause a continuous mechanical deformation of the elastocaloric material for a predetermined period of time, such that the continuous mechanical deformation creates a solid-to-solid phase transformation in the elastocaloric material; emitting exothermic latent heat from the elastocaloric material to increase a temperature of the elastocaloric material; removing the force from the elastocaloric material upon expiration of the predetermined period of time; and absorbing endothermic latent heat into the elastocaloric material to decrease the temperature of the elastocaloric material and/or an environment adjacent to the elastocaloric material or an electronic/phononic device, etc.

Continuous bending-mode elastocaloric cooling/heating flow loop

A scanning probe microscope includes a cantilever structure; and a metallization layer on the cantilever structure. The cantilever structure and the metallization layer expand and contract at equivalent rates upon thermal loading. The cantilever structure and the metallization layer may include matching coefficient of thermal expansion levels. The cantilever structure may include SiN. The metallization layer may include 50 nm of Ti. The metallization layer may include 50 nm of Cr. The metallization layer may include 5 nm of Ti and 45 nm of Ge. The cantilever structure may include no thermally-induced deflections.

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Silver Spring, MD, United States of America

Darin J Sharar