Sige Semiconductor, Inc.

Nortel Networks Corporation

Microsemi Corporation

Darcy Poulin

Peter Ledel Gammel

Alan Trainor

Craig Joseph Christmas

Somsack Sychaleun

Brian Eplett

Kyle Hershberger

Mark Santini

Gord G Rabjohn

Devices and methods for correcting for start-up transients in integrated power amplifier are disclosed. A power amplifier is responsive to a bias control output and is arranged to provide an amplified power output. In some examples, the boost current is adjusted based on a supply voltage and an input power of the power amplifier. The power amplifier can operate in a low power and a high power mode and the adjustments can be made to the supply voltage and/or the input power vary depending on whether the power amplifier is operating in the high or low power mode. The adjustments for the high power mode operation are different than and correspond to the high power mode input power and voltage and the adjustments for the low power mode operation are different than and correspond to the low power mode input power and voltage.

Integrated start-up bias boost for dynamic error vector magnitude enhancement

Low cost semiconductor manufacturing techniques have provided consumers with a wide range of electronic devices supporting communications according to multiple standards. These electronic devices will be deployed within many operational jurisdictions, particularly with roaming features, such as Japan, Europe, Asia-Pacific, South America and North America. However, operational compliance requirements can vary substantially with these different jurisdictions. Current electronic devices are designed, manufactured, calibrated and operated according to a specification providing compliance with broad range of operational jurisdictions despite the performance limitations this applies in many of the operational jurisdictions. Accordingly, there is provided a method of dynamically configuring the electronic device based upon a geographically based determination of the operational jurisdiction from global navigation systems data received by the electronic device. Based upon the determined operational jurisdiction, the operational parameters of a device's communication interfaces are adjusted for improving performance and efficiency of the device within these jurisdictions.

Jurisdiction based parameter setting for wireless transceivers

A circuit is disclosed with an external coupling port for coupling to an external antenna, for example. The circuit has an FDD receive path including a narrowband passband filter. The circuit has a TDD receive path bypassing the narrowband passband filter but relying on a same amplifier. The circuit also has an FDD transmit path including a narrowband passband filter. The circuit has a TDD transmit path bypassing the narrowband passband filter of the FDD transmit path but relying on a same transmit amplifier. A switching configuration allows the circuit to operate in TDD mode, alternating between the TDD receive path and the TDD transmit path and in the FDD mode wherein the FDD transmit and receive paths are simultaneously coupled to the external coupling port.

Dual mode transceiver

A method is disclosed wherein a power level indicating a level of transmission power from an amplifier is provided. An indication of at least one of channel, channel bandwidth, OOB spectral requirements, spectral mask requirements, EVM, modulation rate, and modulation type is also provided. A control signal for controlling one of a bias current provided to the amplifier and a matching circuit for matching an output port of at least a stage of the amplifier is generated, the control signal determined in dependence upon the power level and the at least an indication. Then the one of the bias current and the matching circuit is adjusted in accordance with the control signal.

Method and system for amplifier control

The present invention relates to a bias circuit for biasing a depletion mode power transistor. The bias circuit includes a voltage offset circuit and a transistor, where the voltage offset circuit is serially coupled between the gate terminal of the depletion mode power transistor and the drain terminal of the transistor. The bias circuit generates a bias voltage that, when applied to the gate terminal of the depletion mode power transistor, maintains a substantially constant drain current through the power transistor over a range of threshold voltages caused by process and temperature variations.

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Carp, Canada

Darcy Poulin