Electro Scientific Industries, Inc.

Daragh Finn

Yasu Osako

Lynn Sheehan

Andrew Edwin Hooper

Kelly Bruland

David Barsic

William J Jordens

Xiaoyuan Peng

Robert A Ferguson

Andy E Hooper

Chuan Yang

A Grey Lerner

Kenneth Pettigrew

Jim Dumestre

Yu Chong Tai

Tim Webb

Ruolin Chen

Geoffrey Lott

Employing laser scanning directions () that are oblique to and against a predominant gas flow direction () equalize the quality and waviness characteristics of orthogonal scribe lines () made by the laser scans. Positioning and sequence of multiple scan passes to form a feature wider than the width of a scribe line () can be controlled to enhance quality and waviness characteristics of the edges of the feature.

Laser scan sequencing and direction with respect to gas flow

A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO, HF and, optionally acetic acid.

Substrate containing aperture and methods of forming the same

Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer

An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.

Method and apparatus for laser singulation of brittle materials

An etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. In some embodiments, the system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.

Silicon etching control method and system

Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes

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Beaverton, OR, United States of America

Daragh Finn