Sunplus Technology Co., Ltd.

Industrial Technology Research Institute

Elite Semiconductor Microelectronics Technology Inc.

Sunplus Technology Col, Ltd.

Dar-Chang Juang

Chungpin Liao

Chen-Pang Kung

Kun-Wei Lin

Hsing Chen

Lin-Chien Chen

Pei-Hui Tung

Hung-jui Ting

Pao-Chyuan Chen

De-Sheng Chen

An active clamp photoelectric sensing device includes an input terminal, a first output terminal, a current-to-voltage conversion circuit, and an active clamp circuit. The input terminal receives an input current. The first output terminal outputs a first output voltage. The current-to-voltage conversion circuit is coupled between the input terminal and the first output terminal, and is used to discharge and lower potentials of the input terminal and the first output terminal to a first set voltage according to the state of a reset signal, or is used to gradually increase the first output voltage to a second set voltage. The active clamping circuit is coupled to the current-to-voltage conversion circuit, and is used to clamp the upper limit of the first output voltage to the second set voltage.

Active clamp photoelectric sensing device

A photoelectric sensing device for cancelling crosstalk includes a first capacitor; a first switch, coupled between a current source and the first capacitor, is turned on according to a driving signal, and enables the current source to charge the first capacitor to generate a first capacitor voltage; a second switch, coupled between the first capacitor and an input terminal, is turned on according to a cancellation signal; a current-voltage conversion circuit, coupled to the second switch, receiving an input current corresponding to a crosstalk signal, and generating a crosstalk voltage corresponding to the input current. Wherein, when the second switch is turned on, the crosstalk voltage is subtracted from the first capacitor voltage to cancellate the crosstalk signal, so as to output a correct sensing voltage.

Photoelectric sensing device for cancellate crosstalk

A TFT-LCD source driver with a built-in test circuit includes N driving units and P test units. Each driving unit receives digital data and generates an analog output signal according to the digital data. Each test unit receives the analog output signals, selects one of them as a test signal according to a select signal, and compares the test signal with a high reference voltage and a low reference voltage to output an indication signal. The indication signal is set to indicate an abnormal state as the voltage of the test signal is higher than the high reference voltage or lower than the low reference voltage.

TFT-LCD source driver with built-in test circuit and method for testing the same

A source drive amplifier has a first input circuit controlled by a polarity switching signal for being switched into an NMOS differential amplifying circuit or a bias circuit, and a second input circuit controlled by a polarity switching signal for being switched into a bias circuit or a PMOS differential amplifying circuit. The output of the first input circuit switched into an NMOS differential amplifying circuit drives the PMOS transistor of an output transistor pair for being used as a source out amplifying output stage, and a current provided by the NMOS transistor is used as a bias. The output of the second output circuit switched into a PMOS differential amplifying circuit drives the NMOS transistor of the output transistor pair for being used as a sink in amplifying output stage, and a current provided by the PMOS transistor is used as a bias.

Source drive amplifier of a liquid crystal display

A low temperature coefficient reference current generator has a bandgap reference voltage generator for providing a low temperature coefficient bandgap reference voltage and a positive temperature coefficient current. The low temperature coefficient reference current generator utilizes the low temperature coefficient bandgap reference voltage to drive a positive temperature coefficient resistor disposed in an IC, so as to produce a negative temperature coefficient current. The positive temperature coefficient current and the negative temperature coefficient current are adjusted and combined to produce a low temperature coefficient reference current.

Low temperature coefficient reference current generator

A computer input system utilizing a camera to sense a point source includes a movable light emitting device, which is operated by the user to move and emit at least two lights of different colors. The computer input system further has a camera for capturing the light emitted by the movable light emitting device and transforming a captured light trace produced by the movable light emitting device to XY coordinate data, so as to perform a pointing input operation.

Computer input system utilizing a camera to sense point source

A switchable voltage follower and a bridge driver that utilizes the voltage follower. The voltage follower has an output transistor pair, three switching devices and an operational amplifier. Each of the switching devices is controlled by a polarity terminal for switching the circuit to be a pull-up voltage follower or a pull-down voltage follower. The bridge driver is formed by two switchable voltage followers to provide a bridge push-pull driving capability by driving the two switchable voltage followers alternately.

Switchable voltage follower and bridge driver using the same

A CMOS class AB amplifier has an adaptive level shift circuit, a compensated capacitor, and an output transistor pair. The adaptive level shift circuit includes a current mirror circuit, a diode transistor, a switch transistor, and a current source transistor. The diode transistor is utilized as a bias for driving the switch transistor so as to provide a relatively low linear resistor for being used as a feedback. Therefore, the Q (quality factor) value of the gyration inductance can be effectively reduced and the occurrence of the peak gain can be suppressed effectively, so as to maintain a desired gain margin.

Complementary metal oxide semiconductor class AB amplifier

There is disclosed a programmable driving circuit for being applied in an organic light emitting diode display panel. The driving circuit has a plurality of driver cells, each comprising a switch transistor, a current output transistor, a discharge transistor, and a plurality of multiplexers each for selecting the row driving inputs, column driving inputs, and required bias outputs. By controlling the control terminals of the multiplexers for performing switching controls, the driving circuit is programmed.

Programmable driving circuit

A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N&plus; drain (for power MOSFETs) or P&plus; emitter (for IGBTs), through the N&minus; region to a short distance below the gate oxide. To manufacture such a shunt, an epi wafer with N&minus;epitaxy is first provided on top of an N&plus; (for power MOSFET) or P&plus; (for IGBT) layer. Through a suitable mask (contact or freestanding) on the top surface, the wafer is then subjected to bombardment by protons or deuterons. Because of ion transmutation doping, a region of N type material forms wherever the surface is not masked. By controlling the energies of the ions, this region is caused to extend below the wafer's surface so as to just contact the N&plus; or P&plus; layer or even to go through it. To convert shunt material in the immediate vicinity of the gate oxide back to N&minus;, either counter-doping or trenching followed by dielectric filling and CMP are used.

Power MOSFET and IGBT with optimized on-resistance and breakdown voltage

An organic light emission display module is formed by an organic light emission device panel and a driving circuit board. In manufacturing the organic light emission device panel, electrodes are extended to the edges of the panel. The bonding pads are produced by forming aluminum films. The driving circuit board is made of thin printed circuit board, and bonding pads are manufactured at the edges of the printed circuit board, which are corresponding to the bonding pads of the organic light emission device panel, respectively. The driving circuit board is adhered to the organic light emission device panel, and the each bonding pad of the organic light emission device panel is connected to a respective bonding pad of the driving circuit board. Epoxy resin is filled into the bonding area and gaps between the printed circuit board and the organic light emission device panel.

Organic light emission device display module

A constant current driver with auto-clamped pre-charge function includes a reference bias generator and a plurality of constant current driver cells, each being connected to the reference bias generator to form a respective current mirror. Each constant current driver cell has a switch transistor, a current output transistor and a pre-charge transistor. When a constant current is outputted from the current output transistor for driving an organic light emitting diode, the pre-charge transistor is turned on to provide a drain to source current as an additional large current for rapidly pre-charging the organic light emitting diode until the gate to source voltage of the pre-charge transistor is smaller than the threshold voltage.

Constant current driver with auto-clamped pre-charge function

A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N&plus; drain (for power MOSFETs) or P&plus; emitter (for IGBTs), through the N&minus; region to a short distance below the gate oxide. To manufacture such a shunt, an epi wafer with N&minus; epitaxy is first provided on top of an N&plus; (for power MOSFET) or P&plus; (for IGBT) layer. Through a suitable mask (contact or freestanding) on the top surface, the wafer is then subjected to bombardment by protons or deuterons. Because of ion transmutation doping, a region of N type material forms wherever the surface is not masked. By controlling the energies of the ions, this region is caused to extend below the wafer's surface so as to just contact the N&plus; or P&plus; layer or even to go through it. To convert shunt material in the immediate vicinity of the gate oxide back to N&minus;, either counter-doping or trenching followed by dielectric filling and CMP are used.

Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage

A CMOS (complementary metal-oxide semiconductor) high-frequency ring oscillator is provided for generating an output frequency in response to a control voltage in a wide bandwidth. The ring oscillator is of the type including a plurality of cascaded delay circuits, such as CMOS CSL (common-sense logic) inverters. The ring oscillator is characterized by the additional incorporation of each of the CMOS CSL inverters with either a positive-feedback gate structure or a positive-feedback drain structure so as to improve the output-to-output characteristics of the ring oscillator. More specifically, the ring oscillator is still operable to output an oscillating signal even though the control voltage is reduced to below a certain level, at which point the gain is still larger than 1. The ring oscillator is therefore more advantageous than the prior art both in gain and output-to-output characteristics and is operable over a wide variety of output frequencies, particularly in the low-frequency regions.

Complementary metal-oxide semiconductor high-frequency ring oscillator

A rail-to-rail type of operational amplifier is provided, which has a low offset voltage and improved bandwidth, slew rate, and phase margin. This operational amplifier includes two level-shifting input circuits for receiving two input voltages. The input voltages are further divided into four subvoltages which are then processed by a pair of differential amplifiers. The output differential currents from the differential amplifiers are further processed respectively by two current-summing circuits. The potential difference between the outputs of these two current-summing circuits is then fed to a bias circuit which, in response to the input potential difference, generates a floating bias. An output circuit takes the floating bias as input to thereby generate an output voltage which is regarded as the output of the operational amplifier. In addition to two cascaded-Miller compensation circuits, two mixed compensation circuits are used to perform a compensation on the output voltage and feed the compensated voltage back to the differential amplifiers. This allows the offset voltage to be subject to minimum fluctuations. Moreover, it allows improved bandwidth with increased unit gain as well as improved slew rate and phase margin.

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Hsinchu, Taiwan

Dar-Chang Juang