Xiamen Sanan Optoelectronics Technology Co., Ltd.

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Daquan Lin

Chih-Wei Chao

Xiaoqiang Zeng

Lixun Yang

Shunping Chen

Jianjian Yang

Liqin Zhu

Cheng Yu

A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.

Semiconductor light-emitting device

A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.

Vertical light emitting diode and fabrication method

Growing community of inventors

Xiamen, China

Daquan Lin