Chengdu Monolithic Power Systems Co., Ltd.

Monolithic Power Systems, Inc.

Chengdu Monolithic Power Systems, Inc.

Daping Fu

Yanjie Lian

Ji-Hyoung Yoo

Lei Zhang

Tiesheng Li

Rongyao Ma

Jin Xing

Tao Hong

A lateral transistor having a well region, a body region, a source region, a drain region, a gate structure and a trenched Schottky barrier structure. The trenched Schottky barrier structure extended vertically from a top surface of the well region through the source region and the body region and penetrated into at least a portion of the well region to form a vertical Schottky contact.

Lateral DMOS with integrated Schottky diode

A lateral diode with high breakdown voltage capability and a method for forming the lateral diode. The lateral diode has an anode, a cathode, a substrate having a first conductivity type, an epitaxial layer having formed on the substrate, a current region formed in the epitaxial layer and on the substrate, a first well coupled to the anode, a second well coupled to the cathode, a third well with light doping concentration formed beside the first well, and a guard ring with heavy doping concentration formed in the first well and beside the third well, and between the third well and the second well is a drift region, a lateral breakdown occurs in the third well, the drift region and the second well when a reverse voltage added on the lateral diode is equal to or higher than a breakdown voltage.

Lateral schottky diode with high breakdown voltage capability

An LDMOS device with sinker link. The LDMOS device has a buried layer, a first well region and a sinker linking the buried layer and the first well region. The LDMOS device has a trench with its upper portion surrounded by the first well region and its lower portion surrounded by the sinker. The trench is formed so that the sinker can be formed by ion implantation through the trench. The trench is filled with non-conductive material.

LDMOS device with sinker link

A bipolar junction semiconductor device and associated method of manufacturing, the bipolar junction semiconductor device has a P type substrate, a N type buried layer formed in the substrate, a P&#x2212; type first epitaxial layer formed on the buried layer, a P&#x2212; type second epitaxial layer formed on the first epitaxial layer, a PNP BJT unit formed in the first and second epitaxial layers at a first active area, a NPN BJT unit formed in the first and second epitaxial layers at a second active area and a first isolation structure of N type formed in the first and second epitaxial layers at an isolation area. The isolation area is located between the first active area and the second active area, the first isolation structure connected with the buried layer forms an isolation barrier.

Bipolar junction semiconductor device and method for manufacturing thereof

A JFET having a semiconductor substrate of a first doping type, an epitaxial layer of the first doping type located on the semiconductor substrate, a body region of a second doping type located in the epitaxial layer, a source region of the first doping type located in the epitaxial layer, a gate region of the second doping type located in the body region, and a shielding layer of the second doping type located in the epitaxial layer, wherein the semiconductor substrate is configured as a drain region, the shielding layer is in a conductive path formed between the source region and the drain region.

Junction field effect transistors and associated fabrication methods

A high side DMOS provides high breakdown voltage with small termination area. The high side DMOS has three parts which may comprise a stair-field plate in the termination part of the poly gate.

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Chengdu, China

Daping Fu