Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Daphna Einav

Yehuda Hahn

Karin Inbar

Eran Moshe

Uri Peltz

Einat Lev

Lior Bublil

Selectively writing relevant bins directly to a controller's volatile memory (e.g., SRAM) based on a next-to-write address and writing the remaining bins to a host's volatile memory (e.g., DRAM or HMB), avoids the need for any additional reads from host's volatile memory and writes from controller's volatile memory. Avoiding the need for any additional reads from host's volatile memory, which has a slower access time than controller's volatile memory, improves exit latency from the boot and low-power-state exit flows. Prior to writing the parity bins to the controller or the host, the controller may store parity bins and/or the next-to-write address in non-volatile memory. The next-to-write address is then evaluated to determine whether a party bin is written to the controller's volatile memory or the host's volatile memory.

Optimized XOR loading to SRAM and HMB

An apparatus includes a plurality of non-volatile memory cells and control circuitry connected to the plurality of non-volatile memory cells. The control circuitry is configured to receive write commands from a host and identify write commands associated with temporary data. In a recovery operation, control data associated with the temporary data is omitted from rebuilt control data.

Non-volatile storage system with rapid recovery from ungraceful shutdown

Growing community of inventors

Salit, Israel

Daphna Einav