Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Dapeng Xue

Zhanfeng Cao

Shuilang Dong

Lizhong Wang

Qi Yao

Nianqi Yao

Guangcai Yuan

Ce Ning

Haixu Li

Hehe Hu

Shengguang Ban

Xiaochun Xu

Jianguo Wang

Xinhong Lu

Tianmin Zhou

Zheng Liu

Dongfang Wang

Ke Fei Wang

Qi Qi

Zhongyuan Sun

Haifeng Hu

Peng Xu

Yingwei Liu

Song Liu

Zhiwei Liang

Zhengliang Li

Lei Zhao

Liangliang Li

Ting Zeng

Huan Liu

Liping Lei

Jian Yang

Ke Wang

Guoqiang Wang

Yu Jiang

Kai Sui

Lubin Shi

Yunping Di

Chengfu Xu

Shanshan Xu

Binbin Tong

Yan Qu

Xiaolei Zhang

Yongfei Li

Da Lu

Weiwei Chu

Jingshang Zhou

Qi Gao

Heren Gui

Wanru Dong

Yuan Jia

Niangi Yao

An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer. The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.

Array substrate and manufacturing method therefor, display panel, and backlight module

At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

Oxide thin film transistor and preparation method thereof, and display device

A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

Display substrate and manufacturing method thereof, and display apparatus

An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Oxide thin film transistor, method for manufacturing the same and display device

A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.

Display substrate and preparation method thereof, and display apparatus

The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

Array substrate and splicing screen

The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

Manufacturing method of display substrate and display device

The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate includes a base substrate, a black matrix and a color filter layer located on the base substrate, a quantum dot layer located on a side of the color filter layer away from the base substrate, a barrier layer located on a side of the black matrix away from the base substrate, and a first inorganic layer, and the first inorganic layer at least includes: a first portion located between the color filter layer and the quantum dot layer; a second portion located on the base substrate and between the quantum dot layer and the barrier layer; and a third portion located on a side of the barrier layer away from the base substrate.

Color filter substrate and method for manufacturing the same, display device

A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.

Shift register unit, gate driving circuit, display panel and method for control the shift register unit

The present disclosure related to a visible light communication apparatus, comprising a substrate; a TFT structure layer on the substrate; a photoelectric conversion component on a source or a drain of the TFT structure layer; and a light-emitting component on the substrate. The photoelectric conversion component may be configured to receive an optical signal and convert the optical signal into an electrical signal; and the light-emitting component may be configured to emit an optical signal.

Visible light communication apparatus and fabricating method thereof, visible light communication system

A fingerprint recognition device includes a first substrate and at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector including a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer. A side of the photosensitive layer facing away from the first electrode has a curved shape.

Fingerprint recognition device, manufacturing method thereof, and display panel

An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.

Array substrate, manufacturing method thereof and display device

A display substrate, a method of manufacturing the same, and a display device are disclosed. The display substrate includes a driving substrate and a micro LED chip, wherein the micro LED chip includes a main body and an electrode pin, a TFT is arranged on the driving substrate, the micro LED chip is coupled to the TFT, and the display substrate further includes: a heat dissipation structure arranged between the micro LED chip and the TFT, wherein the heat dissipation structure is electrically coupled to the electrode pin of the micro LED chip.

Display substrate, method for manufacturing display substrate, and display device

The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

LTPS substrate and fabricating method thereof, thin film transistor thereof, array substrate thereof and display device thereof

Growing community of inventors

Beijing, China

Dapeng Xue