Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Daojie Li

Yuliang Wang

Daeyoung Choi

Zengli Liu

Jun Zhou

Fei Al

Shijuan Chen

The present disclosure provides a TFT, an array substrate, their manufacturing methods, and a display device. A source electrode and a drain electrode of the TFT are each of a multi-layered structure including a metal layer and a metal barrier layer. An a-Si active layer of the TFT is covered with an etch stop layer, via-holes penetrating through the etch stop layer are provided at positions corresponding to the source electrode and the drain, and the source electrode and the drain electrode are connected to the a-Si active layer through the via-holes.

Thin film transistor, array substrate, their manufacturing methods, and display device

A method for manufacturing an array substrate includes coating a photoresist onto an insulation layer including a gate insulation layer and an etch stop layer, wherein the gate insulation layer covers a conductive pattern and the etch stop layer covers a semiconductive pattern. The method further includes exposing the photoresist to form a photoresist partially-reserved region and a photoresist unreserved region. The method further includes performing a first etching process to at least partially remove a portion of the insulation layer located at a position corresponding to the photoresist unreserved region, to form an intermediate hole. The method further includes performing a second etching process to form the first via hole and form the second via hole at a position of the intermediate hole, thereby to reveal the semiconductive pattern and the conductive pattern at positions corresponding to the first via hole and the second via hole, respectively.

Array substrate, method for manufacturing the same, and display apparatus

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Beijing, China

Daojie Li