Hrl Laboratories, LLC

The Boeing Company

Danny M Kim

Thaddeus D Ladd

Christopher Stephen Roper

Rongming Chu

Yu Cao

Adam Franklin Gross

Daniel Yap

John J Vajo

Logan D Sorenson

Jason A Graetz

Shanying Cui

Russell Patrick Mott

Matthew T Rakher

Travis Autry

Jennifer Ellis

Ian Counts

Samuel J Whiteley

Edward H Chen

Rongsheng Li

Brian Christopher Grubel

Matthew J Pelliccione

Andrey A Kiselev

James H Kober

Travis M Autry

In some variations, an interferometric frequency-reference apparatus comprises: an atom source configured to supply neutral atoms; a collimator configured to form a collimated beam of the neutral atoms; one or more probe lasers; and a Doppler laser configured to determine a ground-state population of the neutral atoms. Other variations provide a method of creating a stable frequency reference, comprising: forming a collimated beam of neutral atoms; illuminating the neutral atoms with first and second probe lasers; adjusting the frequencies of the first probe laser and second probe laser using Ramsey spectroscopy to an S→D transition of the neutral atoms; and determining a ground-state population of the neutral atoms with another laser. The interferometric frequency-reference apparatus may provide an optical frequency reference or a microwave frequency reference.

Ramsey-Bordé ion frequency-reference apparatus, and methods of making and using the same

In some variations, an interferometric frequency-reference apparatus comprises: an atom source configured to supply neutral atoms to be ionized; an ionizer configured to excite the neutral atoms to form ionized atoms; an ion collimator configured to form a collimated beam of the ionized atoms; probe lasers; and a Doppler laser configured to determine a ground-state population of the ionized atoms, wherein the atom source, the ionizer, and the ion collimator are disposed within a vacuum chamber. Other variations provide a method of creating a stable frequency reference, comprising: forming ionized atoms from an atomic vapor; forming a collimated beam of ionized atoms; illuminating ionized atoms with first and second probe lasers; adjusting the frequencies of the first probe and second probe lasers using Ramsey spectroscopy to an S→D transition of ionized atoms; and determining a ground-state population of the ionized atoms with another laser.

Ramsey-bordé ion frequency-reference apparatus, and methods of making and using the same

A system, apparatus, and method for determining a velocity. A voltage is detected for a planar sensor array while the planar sensor array is moving though a magnetic field, wherein the planar sensor array comprises conductive channels formed in a substrate, wherein the conductive channels are connected in series, and wherein the voltage is generated by the planar sensor array in response to a movement of the planar sensor array through the magnetic field and wherein the voltage is proportional to a velocity of the planar sensor array moving through the magnetic field. The velocity of the planar sensor array is determined using the voltage detected for the conductive channels.

Lorentz force velocity sensor system

A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AIN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Light emitting device and method of making the same

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

Silicon carbide and nitride structures on a substrate

A method, apparatus, and system for forming a semiconductor structure. A first oxide layer located on a set of group III nitride layers formed on a silicon carbide substrate is bonded to a second oxide layer located on a carrier substrate to form an oxide layer located between the carrier substrate and the set of group III nitride layers. The silicon carbide substrate has a doped layer. The silicon carbide substrate having the doped layer is etched using a photo-electrochemical etching process, wherein a doping level of the doped layer is such that the doped layer is removed and a silicon carbide layer in the silicon carbide substrate remains unetched. The semiconductor structure is formed using the silicon carbide layer and the set of group III nitride layers.

Fabricating a silicon carbide and nitride structures on a carrier substrate

Methods of in situ fabrication and formation of horizontal nanowires for a semiconductor device employ non-catalytic selective area epitaxial growth to selectively grow a semiconductor material in a selective area opening of predefined asymmetrical geometry. The selective area opening is defined in a dielectric layer to expose a semiconductor layer underlying the dielectric layer. The non-catalytic selective area epitaxial growth is performed at a growth temperature sufficient to also in situ form a linear stress crack of nanoscale width that is nucleated from a location in a vicinity of the selective area opening and that propagates in a uniform direction along a crystal plane of the semiconductor layer in both the semiconductor layer and the dielectric layer as a linear nanogap template. The semiconductor material is further selectively grown to fill the linear nanogap template to in situ form the nanowire that is uniformly linear.

In situ fabrication of horizontal nanowires and device using same

A light emitting device for emitting UVC radiation. The device comprises a substrate and a patterned layer. The patterned layer comprises a plurality of mask regions on the substrate. Exposed portions of the substrate are disposed between the mask regions. A plurality of nanostructures are disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising a core tip. An active layer is disposed over the plurality of nanostructures. The active layer is a quantum well structure and comprises at least one material chosen from AlN, AlGaN and GaN. A p-doped layer is disposed over the active layer. Both the active layer and the p-doped layer are conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

Semiconductor device having in situ formed horizontal nanowire structure

Some variations provide an alkali metal or alkaline earth metal vapor cell with a solid ionic conductor and intercalable-compound electrodes. The intercalable-compound electrodes are used as efficient sources and/or as sinks for alkali metal or alkaline earth metal atoms, thus enabling electrical control over metal atom content in the vapor cell. Some variations provide a vapor-cell system comprising: a vapor-cell region configured to allow a vapor-cell optical path into a vapor-cell vapor phase; a first electrode; a second electrode electrically isolated from the first electrode, wherein the second electrode contains an intercalable compound intercalated by an element selected from Rb, Cs, Na, K, or Sr; and an ion-conducting layer between the first electrode and the second electrode. The ion-conducting layer is ionically conductive for at least one ionic species selected from Rb, Cs, Na, K, or Sr. The intercalable compound is preferably a carbonaceous material, such as graphite.

Alkali source and/or sink using ion-conducting solid electrolyte and intercalation-compound electrode

Some variations provide an alkali metal or alkaline earth metal vapor cell with a solid ionic conductor and intercalable-compound electrodes. The intercalable-compound electrodes are used as efficient sources and/or as sinks for alkali metal or alkaline earth metal atoms, thus enabling electrical control over metal atom content in the vapor cell. Some variations provide a vapor-cell system comprising: a vapor-cell region configured to allow a vapor-cell optical path into a vapor-cell vapor phase; a first electrode containing an intercalable compound capable of being intercalated by at least one element selected from Rb, Cs, Na, K, or Sr; a second electrode electrically isolated from the first electrode; and an ion-conducting layer between the first electrode and the second electrode. The ion-conducting layer is ionically conductive for at least one ionic species selected from Rb, Cs, Na, K, or Sr. The first intercalable compound is preferably a carbonaceous material, such as graphite.

A device for storing and/or transferring quantum data. The device has a plurality of elongate semiconductor structures arranged in side by said with each elongate semiconductor structure having a quantum well layer of one semiconductor material disposed between upper and lower layers of a different semiconductor material which share the same or essentially the same crystalline structure as that of the quantum well layer. Neighboring ones of the elongate semiconductor structures share a region forming a constriction between the neighboring ones of the elongate semiconductor structures. Also disclosed is a a method of adjusting exchange coupling between laterally coupled quantum wells in a quantum device having sidewalls, the method including: defining the sidewalls by etching a crystalline structure along lattice planes of said crystalline structure, the crystalline structure, after the sidewalls are etched, having a corrugated shaped with protuberances and grooves on opposing major surfaces thereof, and controlling a ratio of the distances (i) between opposing grooves on the opposing major surfaces of the crystalline structure and (ii) between opposing protuberances on the opposing major surfaces of the crystalline structure.

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Agoura Hills, CA, United States of America

Danny M Kim