Motorola Corporation

Other

Danny L Thompson

Jonathan K Abrokwah

William J Dauksher

Kurt W Eisenbeiser

Ronald N Legge

Kumar Shiralagi

Barbara M Foley

Jeffrey M Finder

Bradley M Melnick

Mary C Freeman

Zhiguo Wang

Jeanine L Thompson

A temporary magnetic affixing device () is provided. The temporary affixing device () includes a base portion () having a first surface () and a second surface (). The first surface () of the base portion () includes a magnetic device () attached thereto. A holding handle () is rotatably disposed on the base portion ().

Temporary affixing device

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. To further relieve strain in the accommodating buffer layer, at least a portion of the accommodating buffer layer is exposed to a laser anneal process to cause the accommodating buffer layer to become amorphous, providing a true compliant substrate for subsequent layer growth.

Semiconductor structure including a partially annealed layer and method of forming the same

A laser cleaning process is disclosed for cleaning the surface of materials, such as semiconductor wafers and the like, which process can be performed at atmospheric pressure. The process includes the steps of providing a structure with a surface having undesirable contaminant particles thereon, wetting the surface with a liquid including reactive or non-reactive liquids, and irradiating the surface using photon energy with sufficient energy to remove the wetting liquid and the undesirable material.

Laser cleaning process for semiconductor material and the like

A rapid thermal processing susceptor including a base having a planar surface and an upright sidewall extending around a periphery thereof and encircling a working portion of the planar surface. The working portion and the sidewall define a cavity. A plurality of minimum contact points extend from the working portion into the cavity and are positioned to receive thereon a semiconductor wafer. A cover is receivable by the sidewall for enclosing the cavity.

Rapid thermal processing susceptor

A method of ion implanting a substrate is disclosed, which includes providing a substrate having a surface. A sacrificial layer of semiconductor material is formed on the surface and resistlessly patterning to define masked and unmasked portions. The unmasked portions are etched away to form an implantation mask on the substrate. Ions are implanted in the substrate underlying the etched away unmasked portions and the sacrificial layer is removed.

Method of resistless patterning of a substrate for implantation

A system for indicating an angular position of an object includes a photoemitter (205) producing radiation. A level detection device (210) contains a movable body (220) in a medium (215) occupying a location dependent on a gravitational angle of the object. The movable body (220) has a different degree of absorption than the medium (215). A photodetector (235) positioned such that the level detection device (210) is between the photoemitter (205) and the photodetector (235) detects an amount of the radiation based on the location of the movable body (220). The amount of the radiation detected indicates the angular position of the object.

System and method for indicating an angular position of an object using

A semiconductor device with an improved insulating and passivating layer including the steps of providing a gallium arsenide substrate with a surface, and crystallographically lattice matching an insulating and passivating layer of indium gallium fluoride on the surface of the gallium arsenide substrate. In one embodiment the semiconductor device is a FET and the layer of indium gallium fluoride covers at least an inter-channel area surrounding the gate.

Growing community of inventors

Mesa, AZ, United States of America

Danny L Thompson